Abstract:SiO2:Si:Er films were deposited on n+-Si substrate using the magnetron sputtering technique, and then Au/ SiO2: Si:Er /n+-Si diodes were fabricated. Both Er3+ photoluminescence (PL) from the SiO2: Si: Er/n+-Si and electroluminescence (EL) from the Au/SiO2: Si: Er /n+-Si diodes were studied. The 1.54 micrometers PL intensity ratio of SiO2: Si: Er/n+-Si to that of the SiO2: Er/n+-Si measured under identical conditions can be as large as ~30. While the 1.54 micrometers EL intensity ratio of an Au/ SiO2:Si:Er/n+-Si diode to that of an Au/SiO2:Er/n+-Si diode measured under identical conditions can be as large as 6. We also deposited nanoscale (SiO2:Er/Si(1.0~4.0nm)/SiO2:Er) sandwich structure, in which the silicon layer between the two SiO2:Er barriers was 1.0~4.0 nm thick with an interval of 0.2 nm, on both n+-Si and p-Si substrates. Each EL spectrum of the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 micrometers ), 0.806 eV (1.54 micrometers ) and 0.860 eV (1.44 micrometers ), and full widths at half maximum of 0.052, 0.045 and 0.055 eV, respectively. Among the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes with the Si layers having various thicknesses, the EL intensities of the 1.64, 1.54 and 1.44 micrometers bands of the diode with a 1.6 nm Si layer attain maxima which are 22, 8 and 7 times larger than those of the control diode without any Si layer (Au/nanoscale SiO2:Er/n+-Si), respectively.

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

Effects of Si, Ge and Ar Ion-Implantation on EL from Au/Si-rich SiO2/p-Si Structure

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Electroluminescence from amorphous SiSiO2 superlattices

Electroluminescence from an Au-Extra-Thin Silicon Oxynitride Film Si Structure

Electroluminescence from Au/(Nanoscale Ge/Nanoscale Sio2) Superlattices/P-Si

Room-temperature 1.54 Μm Electroluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited on N+-Si Substrates by Magnetron Sputtering

Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/ p-Si structures

Room-temperature Luminescence at 1.54 Μm and Other Wavelengths from Er-doped Si-rich Si Oxide

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Electroluminescence from Au/Si Oxynitride Film/si Structures with the Films Having Different Chemical Compositions

4 MeV Electron Irradiation Effect on Electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si Structures

Electroluminescence from Semitransparent Au Film/Sio2/(Amorphous-Si/Sio2) Superlattice/P-Si Structure

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE+-IMPLANTED SIO2 FILMS THERMALLY GROWN ON CRYSTALLINE SILICON

Luminescence from Si/SiO 2 with Si Implantation

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism