Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE+-IMPLANTED SIO2 FILMS THERMALLY GROWN ON CRYSTALLINE SILICON

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Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Photoluminescence from C+-implanted SiO2 films thermally grown on crystalline silicon

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Electroluminescence from Er-doped GeO 2 nanofilms fabricated by atomic layer deposition on silicon: Effect of annealing temperature on film properties

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Luminescence from Si/SiO 2 with Si Implantation

Dislocation-related electroluminescence of silicon after electron irradiation

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Strong Green Electroluminescence from Silicon Based Oxide Films

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence