Photoluminescence from C+-implanted SiO2 films thermally grown on crystalline silicon

Liangsheng Liao,Xiaoyuan Hou

1997-01-01

Progress in Natural Science

Abstract:null

What problem does this paper attempt to address?

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

LS Liao,ZH Xiong,X Zhou,XB Liu,XY Hou

DOI: https://doi.org/10.1063/1.119378

IF: 4

1997-01-01

Applied Physics Letters

Abstract:Carbon ions at an energy of 35 keV with a dose of 5×1016 cm−2 were implanted into SiNxOy films grown on crystalline silicon by plasma enhanced chemical vapor deposition. Intense photoluminescence (PL) peaked at about 550 nm is observed in the implanted films under an excitation of 441.6 nm laser line. The PL intensity varies with annealing temperature, and reaches a maximum at the annealing temperature of 600 °C. The luminescence may originate from the complex of Si, N, O, and C in the films.
Photoluminescence from silicon-based SiNxOy:C+ films

Liangsheng Liao,Xiaobing Liu,Zuhong Xiong,Jun He,Xiaoyuan Hou

1998-01-01

Abstract:A layer of -120 nm SiNxOy film was grown on crystalline silicon wafers by plasma enhanced chemical vapor deposition. Carbon ions were implanted into the film with the energy of 35 keV and the dose of 5×1016 cm-2. The C+-implanted sample exhibits photoluminescence peaked at 550 nm under the excitation of 441.6 nm laser line, and the luminescence intensity reaches its maximum for sample thermally annealed at about 600 °C for 30 min.
Intense Short-Wavelength Photoluminescence from Thermal Sio2 Films Co-Implanted with Si and C Ions

J Zhao,DS Mao,ZX Lin,BY Jiang,YH Yu,XH Liu,HZ Wang,GQ Yang

DOI: https://doi.org/10.1063/1.122299

IF: 4

1998-01-01

Applied Physics Letters

Abstract:Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 °C annealing for 60 min. C ions were subsequently used to be implanted into the same depth region. PL was observed from the as-implanted samples with and without annealing. The PL intensity increases with annealing temperature. Comparing the PL spectra and the PL dynamics of the C-implanted, annealed, Si-implanted (CIASI) SiO2 films with those from Si- and C-implanted SiO2 films suggests that the interaction of Si and C in SiO2 films plays an important role in the luminescence in CIASI SiO2 films.
Luminescence from Si/SiO 2 with Si implantation

Lan Ai-dong,Liu Bai-xin,Bai Xin-de

DOI: https://doi.org/10.1088/0256-307X/14/7/020

1997-01-01

Chinese Physics Letters

Abstract:Silicon single crystals with a SiO 2 overlayer of various thicknesses (1000-6000?) were implanted by 120 and 160 keV Si-ions to doses in a range of (0.5-1.0)��10 17cm -2 to study the visible light emission in their as-implanted and post-annealed states. An emission band peaked around 2.0 eV was visible in the photoluminescence (PL) spectra of all the as-implanted samples. After post-annealing at 1100�� C in a flowing N 2 gas, it was found that a visible band peaked in the range of 1.7 eV is detectable from all the samples and that the PL intensity exihibits a correlation with the oxygen concentration in the implanted region. Possible mechanisms responsible for the observed light emission were also discussed. ? 1997 by Allerton Press, Inc.
Photoluminescence from Si-based SiN X O Y Films

Liangsheng Liao,Xiaobing Liu,Zuhong Xiong,Shuai Yuan,Xiaoyuan Hou

DOI: https://doi.org/10.1007/bf02883923

1998-01-01

Abstract:B+, C+, Si+, and As+ with dose of 5 × 1016 cm−2 were implanted into SiNxOy, films grown on crystalline silicon by plasma-enhanced chemical vapor deposition. The ion-implanted samples exhibit their photoluminescence with different intensities and different peak wavelengths after thermal annealing. Especially, the C+-implanted SiNxOy, films show very intense photoluminescence at green-yellow color region.
Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

DH Chen,ZM Liao,L Wang,HZ Wang,FL Zhao,WY Cheung,SP Wong

DOI: https://doi.org/10.1016/s0925-3467(03)00061-2

IF: 3.754

2003-01-01

Optical Materials

Abstract:Photoluminescence from β-SiC nanocrystals embedded in SiO2 films at room temperature has been studied. The β-SiC nanocrystals were formed by carbon implantation into Si substrate at 35 keV with various dose, followed by post-implantation annealing at 1200 °C for 30 min in Ar ambient. Thermal dry-oxidation of the annealed samples at 1050 °C for 3 h was performed to form β-SiC nanocrystals embedded in SiO2 films. The composition and chemical state of C and Si atoms were characterized by non-Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy, respectively. FTIR results show that β-SiC nanocrystals were formed in SiO2 films, and the amount of β-SiC nanocrystals in SiO2 films increases with increasing of implanted dose. The photoluminescent properties of the samples were measured at room temperature with a Hitachi F4010 fluorescence spectrophotometer using a xenon lamp as an excitation source (300 nm). Two distinguishable PL bands located at around 460 and 535 nm were observed in all the samples. The PL intensity significantly depends the implanted dose, and there is a critical implanted dose of 2×1017 cm−2, at which the PL intensity reaches the largest value.
Porous Structures and Short-Wavelength Photoluminescence of C + -Implanted SiO 2 Films

J Zhao,DS Mao,XZ Ding,ZX Lin,BY Jiang,YH Yu,GQ Yang,XH Liu

DOI: https://doi.org/10.1088/0256-307x/16/5/018

1999-01-01

Chinese Physics Letters

Abstract:C ions of three different energies were sequentially implanted into SiO2 films grown by plasma enhanced chemical vapor deposition. Microstructures of the samples were studied with transmission electron microscopy (TEM) and secondary ion mass spectroscopy. As revealed by cross-sectional TEM, porous structures had been created in the implanted region during ion implantation. No photoluminescence (PL) was detected from the as-implanted samples. However, intense short-wavelength PL peaking at 360-370 nm and similar 450 nm was observed from the annealed samples. The blue light from samples excited by an Xe lamp can be observed by naked eyes at room temperature. The light emission mechanisms are briefly discussed.
ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE+-IMPLANTED SIO2 FILMS THERMALLY GROWN ON CRYSTALLINE SILICON

JY Zhang,XL Wu,XM Bao

DOI: https://doi.org/10.1063/1.120102

IF: 4

1997-01-01

Applied Physics Letters

Abstract:Electroluminescent devices have been fabricated based on Ge+-implanted SiO2 films thermally grown on crystalline silicon. Both room-temperature electroluminescence and photoluminescence spectra are found to have three luminescent bands peaked at 3.1, 2.1, and 1.6 eV. The electroluminescent devices have onsets for emission under forward bias of 5 V and under reverse bias of −13 V. Its emission is stable and reproducible. Spectral analyses suggest that the electroluminescent excitation of the 3.1 eV band may be related to the impact ionization by hot electrons, whereas that of the 2.1 and 1.6 eV bands to the radiative recombination of hole-electron pairs.
Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

刘涌,肖瑛,沃银花,宋晨路,韩高荣

DOI: https://doi.org/10.3969/j.issn.1672-7126.2004.06.019

2004-01-01

Abstract:Amorphous Si films were grown by atmospheric pressure chemical vapor deposition (APCVD). Its microstructures and optical properties were characterized with photo-luminescence (PL) spectroscopy, Raman and X-ray photoelectron spectroscopy (XPS). A green luminescence peak at 523 nm was observed. Raman and XPS spectra show that the films display Si-rich and O-rich phases. We suggest that the phase interfaces result in the luminescence. Data fitting of Raman spectra indicates that Si nano-crystalline grains are embedded in the films.
Intense UV-visible Photoluminescence from Si/sup +/ and N/sup +/ Co-Implanted Thermal SiO/sub 2/ Films

YH Yu,L Li,YM Lei,J Zhao,DS Mao,SC Zou,B Sundaraval,EZ Luo,SP Wong,JB Xu,IH Wilson

DOI: https://doi.org/10.1109/.2000.924266

2003-01-01

Abstract:Intense UV-visible photoluminescence (PL) is observed at room temperature from thermal SiO/sub 2/ films implanted with Si and N ions. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at /spl sim/330 nm and /spl sim/430 nm were observed from the samples at room temperature with and without annealing. The stability of the implanted ions particularly N ions is evaluated by non-Rutherford backscattering spectroscopy. Electron spin resonance was also used to characterize the modifications of the Si/sup +/ and N/sup +/ coimplanted SiO/sub 2/ films. It is found that the PL has a strong dependence on the stabilized N in the Si/sup +/ and N/sup +/ coimplanted SiO/sub 2/ films. The PL is suggested to originate from complex of Si, N and O.
Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

A.D. Lan,X.D. Bai,B.X. Liu

DOI: https://doi.org/10.1016/S0168-583X(96)00979-2

1997-01-01

Abstract:Si-ion implantation into Si single crystals with SiO2 overlayers of various thicknesses was carried out to study the implantation-induced visible light emission. Some new characteristic luminescence bands associated with the thin SiO2 overlayer were observed. A visible band peaked in the range of 1.7 eV was observed after post annealing at 1100 degrees C in a flowing N-2 and this band appeared from the samples covered with a very thin layer (1000 Angstrom). A new luminescence band around 1.5 eV was detected in the samples with a thick SiO2 (3000 Angstrom) layer after post annealing. Possible mechanisms responsible for the observed light emission were also discussed.
Short-wavelength Photoluminescence from Silicon and Nitrogen Coimplanted SiO2 Films

J Zhao,DS Mao,ZX Lin,XZ Ding,BY Jiang,YH Yu,XH Liu,GQ Yang

DOI: https://doi.org/10.1063/1.123564

IF: 4

1999-01-01

Applied Physics Letters

Abstract:Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films implanted with Si and N is reported. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at ∼330 and ∼430 nm were observed from the samples at room temperature with and without annealing. It is found that the PL has a strong dependence on the stabilized N in the Si- and N-coimplanted SiO2 films. The PL may originate from a complex of Si, N, and O.
Efficient Si-based Light-Emitting Materials Fabricated by Si- and N-coimplanted SiO2 Films

J Zhao,DS Mao,ZX Lin,YH Yu,XH Liu,GQ Yang

DOI: https://doi.org/10.1016/s0167-577x(99)00052-x

IF: 3

1999-01-01

Materials Letters

Abstract:Experimental results to fabricate Si-based light-emitting materials by Si and N coimplantation into SiO2 films are reported. Intense photoluminescence (PL) was observed from the implanted samples with and without annealing. The PL intensity varied with the increased annealing temperature and had a maximum at about 600°C. The X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectra were used to characterised the microstructures. It is suggested that the PL may originate from N-related defects and/or Si–O-based species.
Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with A Thin Sio2 Layer

AD Lan,BX Liu,XD Bai

DOI: https://doi.org/10.1143/jjap.36.l1019

1997-01-01

Abstract:An investigation of Si ion implantation into Si single crystals covered with a SiO2layer of various thicknesses (1000–3000 Å) was conducted and new characteristic luminescence bands were observed. A visible band that peaked around 1.89 or 2.0 eV was observed from the as-implanted samples. After high temperature post annealing, a visible band located in the range of 1.7 eV was detected. Interestingly, a new luminescence band around 1.5 eV was observed, for the first time, in a sample covered with a 3000 Å SiO2layer, after high dose implantation and annealing. We report, in this letter, the experimental results and a brief discussion concerning the various possible mechanisms responsible for the observed luminescence bands.
Visible Photoluminescence Induced in Samples by Si Implantation

AD Lan,BX Liu,XD Bai

DOI: https://doi.org/10.1088/0953-8984/9/23/022

1997-01-01

Abstract:Implantation-induced visible light emission was studied using 120 and 160 keV Si-ion implantation into Si single crystals covered with thin layers of various thicknesses. A visible band centred at around 2.0 eV was observed from the samples implanted to a dose range of . After post-annealing at in flowing gas, another visible band located at 1.7 eV was detected for all of the samples. The photoluminescence intensity was found to correlate with the oxygen concentration in the implantation region, which was estimated using the program TRIM-92 (from `transport of ions in matter'). A mechanism that may be responsible for the observed light emission was discussed in terms of the so-called three-region model.
Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Zhonghan Shen,Changliang Wu,Qian Lu,Xin Zhang,Xiao-Jing Wu

DOI: https://doi.org/10.1002/pssa.200723038

2007-01-01

Abstract:Luminescent phenomenon, especially electroluminescence (EL), is studied for two samples with a structure of Si/SiO2/Si prepared by oxygen implantation. The asymmetry of EL found in this structure is attributed to the electrical asymmetry of these samples. Several luminescent spots can be observed at the exact same positions under both positive and negative bias, and their area density is about 10(2)/cm(2) in these samples. Photoemission microscope (PEM) and optical beam induced resistance change (OBIRCH) are used for the study of EL phenomenon before and after electrical breakdown of the samples, while transmission electron microscope (TEM) is used for the study of the sample's structure. Nc-Si (nanocrystal silicon) related peaks cannot be found in photoluminescence (PL) spectra for the sample containing Si islands, while oxygen defect related peaks between 350-650 tun can be found for all samples. Luminescence mechanism is discussed based on the model of defect luminescent center (DLC). (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Peigao Han,Zhongyuan Ma,ZhengYue Xia,Deyuan Chen,Jun Xu,Bo Qian,San Chen,Wei Li,XinFan Huang,Kunji Chen,Duan Feng,韩培高,马忠元,夏正月,陈德媛,徐骏,钱波,陈三,李伟,黄信凡,陈坤基

DOI: https://doi.org/10.1088/1009-1963/16/5/040

2007-01-01

Chinese Physics

Abstract:Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL, and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 ran and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL, band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Han Pei-Gao,Ma Zhong-Yuan,Xia Zheng-Yue,Chen De-Yuan,Xu Jun,Qian Bo,Chen San,Li Wei,Huang Xin-Fan,Chen Kun-Ji,Feng Duan

DOI: https://doi.org/10.1088/1009-1963/16/5/040

2007-01-01

Abstract:Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 nm and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
The photoluminescence of SiCN thin films prepared by C+ implantation into α-SiNx:H

Yuzhen Liu,Xia Zhang,Chao Chen,Guobin Zhang,Pengshou Xu,Dapeng Chen,Lijun Dong

DOI: https://doi.org/10.1016/j.tsf.2010.01.028

IF: 2.1

2010-01-01

Thin Solid Films

Abstract:SiCN thin films were prepared by high-dosage (2×1017cm−2) C+ ion implantation into α-SiNx:H films. The prepared films were then processed by thermal annealing for 2h at 800°C, 1000°C and 1200°C respectively. The composition and bond structure of SiCN were analyzed by X-ray photoemission spectroscopy, Auger electron spectroscopy, Raman spectroscopy and X-ray diffraction, and photoluminescence. Ternary structure with N bridging C and Si of the film annealed at 800°C was found. The luminescent properties of SiCN have also been studied by synchrotron radiation at 20K. Four emission bands were observed, corresponding to 2.95, 2.58, 2.29 and 2.12eV at 20K, respectively. In this paper, we report the experimental results and try to explain them.

Photoluminescence from C+-implanted SiO2 films thermally grown on crystalline silicon

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Photoluminescence from silicon-based SiNxOy:C+ films

Intense Short-Wavelength Photoluminescence from Thermal Sio2 Films Co-Implanted with Si and C Ions

Luminescence from Si/SiO 2 with Si implantation

Photoluminescence from Si-based SiN X O Y Films

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

Porous Structures and Short-Wavelength Photoluminescence of C + -Implanted SiO 2 Films

ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GE+-IMPLANTED SIO2 FILMS THERMALLY GROWN ON CRYSTALLINE SILICON

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

Intense UV-visible Photoluminescence from Si/sup +/ and N/sup +/ Co-Implanted Thermal SiO/sub 2/ Films

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

Short-wavelength Photoluminescence from Silicon and Nitrogen Coimplanted SiO2 Films

Efficient Si-based Light-Emitting Materials Fabricated by Si- and N-coimplanted SiO2 Films

Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with A Thin Sio2 Layer

Visible Photoluminescence Induced in Samples by Si Implantation

Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

The photoluminescence of SiCN thin films prepared by C+ implantation into α-SiNx:H