Electroluminescence from amorphous SiSiO2 superlattices

G.G Qin,S.Y Ma,Z.C Ma,W.H Zong,You Li-ping

DOI: https://doi.org/10.1016/S0038-1098(98)00043-X

IF: 1.934

1998-01-01

Solid State Communications

Abstract:Amorphous SiSiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of SiO2 layers in all the superlattices are 1.5 nm and those of Si layers in six types of the superlattices are 1.0, 1.4, 1.8, 2.2, 2.6 and 3.0 nm. Visible electroluminescence (EL) has been observed from the semitransparent Au film/(amorphous SiSiO2 superlattice)/p type Si structures at a forward bias of 4 V or larger. A broad band with two peaks (or shoulders) around 630–650 nm and 510 nm appear in the EL spectra of the structures. The effects of thicknesses of Si layers in the amorphous SiSiO2 superlattices and of input electrical power on the EL spectra are studied systematically.