Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Theoretical and Experimental Development of Advanced Dopant-Sensitive Systems

Study on solid-phase crystallization of B-doped a-Si:H film

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

The distribution of Sb atoms in delta-doped silicon crystal

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Comparison on Mechanical Properties of Heavily Phosphorus- and Arsenic-Doped Czochralski Silicon Wafers

Crystalline Quality of Si Epilayers Influenced by Sb Doping

Structural Modulation and BC8 Enrichment of Silicon via Dynamic Decompression

THE DISTRIBUTION OF Sb ATOMS IN δ—DOPED SILICON CRYSTAL

Observation of Boron Doping Induced Surface Roughening in Silicon Molecular Beam Epitaxy

Role of silicon on the conductivity GaSb surface: A first-principles study

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers