Abstract:Understanding the distributions and behaviors of dopants in Si nanocrystal are the primary and necessary issues to realize the controllable doping at nanoscale and develop the next generation of optoelectronic devices. This work reports the atomic-scale distributions of phosphorus and boron dopants in Si nanocrystals multilayers. The phosphorus-doped and boron-doped Si nanocrystals/SiO2 multilayers are fabricated by PECVD and subsequently annealed at 1000 °C. It is found that the locations of phosphorus are redistributed after the formation of Si nanocrystals due to the combined effects of formation energy and self-purification. Phosphorus dopants are mainly distributed at the Si nanocrystals surfaces to passivate the dangling bonds, while part of them incorporate into Si nanocrystals lattice sites to provide free electrons. However, boron dopants exhibit different distributions in contrast to phosphorus. The concentration of boron on Si nanocrystals surfaces can reach as high as 40.0 at. %, which forms a dopant-shell covering on Si nanocrystals. Meanwhile, the boron dopant-shell can modify the surface states of Si nanocrystals like Si-oxide related emission centers and dangling bonds, which is responsible for the luminescence properties. Moreover, the boron-aggregations with concentration near 74.8 at. % are appeared inside Si nanocrystals and led to the damage of crystalline lattice.

THE DISTRIBUTION OF Sb ATOMS IN δ—DOPED SILICON CRYSTAL

The distribution of Sb atoms in delta-doped silicon crystal

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Crystalline Quality of Si Epilayers Influenced by Sb Doping

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Depth Profile of Delta-doped Semiconductors by X-Ray Reflection Technique

Excitonic Line Broadening in Pbsrse Thin Films Grown by Molecular Beam Epitaxy

Theoretical and Experimental Development of Advanced Dopant-Sensitive Systems

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Study on the oxygen concentration reduction in heavily Sb-doped silicon

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Far-infrared reflection spectra of PbSrSe thin films grown by molecular beam epitaxy

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

X-Ray Reflectivity Measurement Of Delta-Doped Erbium Profile In Silicon Molecular-Beam Epitaxial Layer