Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Surfactant Influence on the Ge Heteroepilayer on Si(0 0 1) Studied by X-ray Diffraction and Atomic Force Microscopy

SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Study of Si and Ge growth on Si(100) surface

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Dimer-breaking-assisted Exchange Mechanism in Surfactant-Mediated Epitaxial Growth of Ge on Si(001):Ab Initiototal Energy Calculations

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Crystalline Quality of Si Epilayers Influenced by Sb Doping

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

The stability of strained H:Si(105) and H:Ge(105) surfaces