Abstract:Epitaxial growth of Si/SiGe from hydride precursors has been well established as the preferred technique for preparation of ‘virtual substrate’ and active layers of heterojunction metal-oxide-semiconductor devices as well as other Si/SiGe heterojunction based device structures. This paper reviews briefly the role of hydrogen in the growth mechanisms and establishes the basic reaction pathways in the growth process. The surface related segregation of Ge and As are examined in the context of formation of sharp SiGe/Si heterojunctions and sharp doping profiles. The influence of the growth environment on these surface segregation processes are revealed by the extended rate equation based ‘two-site’ exchange model. The optimisation of growth conditions are clearly identified from the trend gathered from secondary ion mass spectrometry measurements. The strain relaxation process during the growth of virtual substrates often leads to bunching and a high density of threading dislocations and requires substantially thicker grading layers. Some preliminary work shows that incorporation of ‘stresser’ layers in the grading region substantially reduces these detrimental features enabling relatively thin grading layers to be used.

SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION

Surfactant Influence on the Ge Heteroepilayer on Si(0 0 1) Studied by X-ray Diffraction and Atomic Force Microscopy

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Study of Si and Ge growth on Si(100) surface

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Epitaxial Growth Of Ge1-Xsnx Films With X Up To 0.14 Grown On Ge (00l) At Low Temperature

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Crystalline Quality of Si Epilayers Influenced by Sb Doping

Tensile-strained Ge 1− x Sn x layers on Si(001) substrate by solid phase epitaxy featuring seed layer introduction

Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1???xSn x /Ge semiconductor probed by x-ray absorption and diffraction methods