Abstract:A novel technique named "the single-well energy representation" is developed for analyzing the valence band structures of strained single or multiple quantum well structurer. Analysis and optimization are performed for 1.55 mu m InGaAs/InGaAsP strained multiple quantum well lasers lattice matched to InP with 1.1 mu m barrier bandgap, and some significant results are obtained. The band offsets are functions of the strain instead of constants. A certain relation exists between the strain and the well width as well as the indium composition in the InGaAs well material. The strain changes the valence band structure and the density of states, and hence affects the properties of the lasers. The compressive strain results in higher peak gain and differential gain of the TE polarization. The minimum threshold current density exists, and the well number is optimized. When the compressive strain is beyond 0.5%, the optimum well number varies slowly, in particular, the minimum threshold current density varies very slightly, and it nearly maintains a constant. The optimum well number and the minimum threshold current density decrease with an increase in the cavity length. For an about 1000 mu m cavity length, the optimum well number is about 1 in the range of compressive strain from 0.4% to 3.0%. In this case the single quantum well laser has the lowest threshold current density.

Analysis of coupling effect on valence band structures of strained multiple quantum wells

Effects of Distance Between Wells on Band Structure and Characteristics of InGaAs/InGaAsP Strain-Compensated Multiple Quantum Well Lasers

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

Effective Well Width Analysis in Quantum Well Struct ures

Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells

Characteristic Analysis Of Ingaas/Ingaasp Strained Quantum Well Lasers

Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser

Band Hybridization Effect in InAs/GaSb Based Quantum Wells

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Reanalysis of Energy Band Structure in the Type-II Quantum Wells

Compensation mechanism of carriers within weakly coupled quantum wells

A Fully Verified Theoretical Analysis Of Strain-Photonic Coupling For Quantum Wells Embedded In Wavy Nanoribbons

The effects of multiply quantum wells (MQW) on optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures (SCH)

Effects of inhomogeneous strain of quantum-well structures on the band-structure and gain

Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

Efficient band-structure calculations of strained quantum wells

Optical Study on the Coupled GaAsSb/GaAs Double Quantum Wells

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Coupling Properties in Periodic Waveguides and in Multiple Quantum-Well Waveguides