Abstract:In this research, a laser-dressed double GaAsSb/GaAs parabolic quantum well was modeled to explore the intra/valence-band transition-dependent optoelectronic features considering the effects of the geometry of the well and antimony content. The laser-dressed electronic characteristics were investigated by solving the Schrödinger equation within the framework of the effective mass for a variable masse versus the geometry of the confinement potential. The calculations were based on the Floquet technique and Kramers-Henneberger transformation using the finite element method. The linear and the third-order nonlinear optical absorption coefficients and refractive index changes were examined using the density matrix method through an iterative procedure. The laser field dependence exhibited a transition from a double confinement profile to a triple one along with an enhancement in the number of the electronic bound states. In the pursuit of laser studies, a split was detected in doubly degenerated energy states, leading to a blueshift along with an attenuated resonance in the intra/valence-band optical transitions with incrementing the laser-dressing effects. The optoelectronic features of the laser-dressed quantum well exhibited a complicated behavior under varying half-width of the well and the antimony content. Interestingly, the effect of the geometry of the well was more pronounced than the antimony content.

Effects of Distance Between Wells on Band Structure and Characteristics of InGaAs/InGaAsP Strain-Compensated Multiple Quantum Well Lasers

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

Analysis of coupling effect on valence band structures of strained multiple quantum wells

Threshold Characteristics of 1.55-Μm InGaAs/InGaAsP Strain-Compensated Quantum Well Lasers with Zero Net Strain

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

Characteristic Analysis Of Ingaas/Ingaasp Strained Quantum Well Lasers

Effective Well Width Analysis in Quantum Well Struct ures

Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser

Gain Characteristics of the Ingaas Strained Quantum Wells with Gaas, Algaas, and Gaasp Barriers in Vertical-External-Cavity Surface-Emitting Lasers

The intra/valence-band linear and third-order nonlinear optical properties of a laser-dressed double GaAsSb/GaAs parabolic quantum well: the effect of the geometry of the well and antimony content

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

The effects of multiply quantum wells (MQW) on optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures (SCH)

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers

Theoretical Study of Linewidth Enhancement Factor of InGaAs/GaAs Strained Quantum Well Lasers

Optical Study on the Coupled GaAsSb/GaAs Double Quantum Wells

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells