Abstract:A novel technique named "the single-well energy representation" is developed for analyzing the valence band structures of strained single or multiple quantum well structurer. Analysis and optimization are performed for 1.55 mu m InGaAs/InGaAsP strained multiple quantum well lasers lattice matched to InP with 1.1 mu m barrier bandgap, and some significant results are obtained. The band offsets are functions of the strain instead of constants. A certain relation exists between the strain and the well width as well as the indium composition in the InGaAs well material. The strain changes the valence band structure and the density of states, and hence affects the properties of the lasers. The compressive strain results in higher peak gain and differential gain of the TE polarization. The minimum threshold current density exists, and the well number is optimized. When the compressive strain is beyond 0.5%, the optimum well number varies slowly, in particular, the minimum threshold current density varies very slightly, and it nearly maintains a constant. The optimum well number and the minimum threshold current density decrease with an increase in the cavity length. For an about 1000 mu m cavity length, the optimum well number is about 1 in the range of compressive strain from 0.4% to 3.0%. In this case the single quantum well laser has the lowest threshold current density.

Threshold Characteristics of 1.55-Μm InGaAs/InGaAsP Strain-Compensated Quantum Well Lasers with Zero Net Strain

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

High Temperature Characteristics Of 1.55 Mu M Ingaas/Ingaasp Strain-Compensated Multiple Quantum Well Lasers

Effects of Distance Between Wells on Band Structure and Characteristics of InGaAs/InGaAsP Strain-Compensated Multiple Quantum Well Lasers

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

1.48 Mu M Ingaas/Ingaasp Separated Confinement Strained Layer Multiple Quantum Well Lasers

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Extremely Low Threshold Current, Buried-Heterostructure Strained Ingaas Gaas Multiquantum Well Lasers

1.55 Μm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Characteristic Analysis Of Ingaas/Ingaasp Strained Quantum Well Lasers

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Gain Characteristics of 1.3 Mu-M Compressively Strained Mqw Lasers at High-Temperature

1.55 Μm Wavelength InAsP/InGaAsP Multiple Quantum Well Laser Based Upon Solid Source Molecular Beam Epitaxy

GaAs/AlGaAs quantum cascade lasers

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy