Abstract:A novel technique named "the single-well energy representation" is developed for analyzing the valence band structures of strained single or multiple quantum well structurer. Analysis and optimization are performed for 1.55 mu m InGaAs/InGaAsP strained multiple quantum well lasers lattice matched to InP with 1.1 mu m barrier bandgap, and some significant results are obtained. The band offsets are functions of the strain instead of constants. A certain relation exists between the strain and the well width as well as the indium composition in the InGaAs well material. The strain changes the valence band structure and the density of states, and hence affects the properties of the lasers. The compressive strain results in higher peak gain and differential gain of the TE polarization. The minimum threshold current density exists, and the well number is optimized. When the compressive strain is beyond 0.5%, the optimum well number varies slowly, in particular, the minimum threshold current density varies very slightly, and it nearly maintains a constant. The optimum well number and the minimum threshold current density decrease with an increase in the cavity length. For an about 1000 mu m cavity length, the optimum well number is about 1 in the range of compressive strain from 0.4% to 3.0%. In this case the single quantum well laser has the lowest threshold current density.

Gain Characteristics of 1.3 Mu-M Compressively Strained Mqw Lasers at High-Temperature

High Temperature Characteristics Of 1.55 Mu M Ingaas/Ingaasp Strain-Compensated Multiple Quantum Well Lasers

1.9 μm hybrid silicon/iii-v semiconductor laser

Threshold Characteristics of 1.55-Μm InGaAs/InGaAsP Strain-Compensated Quantum Well Lasers with Zero Net Strain

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

High Performance 1.3μm InAs/GaAs Quantum Dot Lasers with Low Threshold Current and Negative Characteristic Temperature

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

1.5 μm in GaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

1.48 Mu M Ingaas/Ingaasp Separated Confinement Strained Layer Multiple Quantum Well Lasers

Saturation Characteristics of Ga1-xInxAs/GaInAsP/InP Tensile-Strained Quantum-Well Semiconductor Laser Amplifiers with Tapered Waveguide Structures

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Directly-coupled Well-Wire Hybrid Quantum Confinement Lasers with the Enhanced High Temperature Performance

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Saturation Characteristics of Ga/sub 0.68/in/sub 0.32/as/gainasp/inp Tensile-Strained Quantum-Well Semiconductor Laser Amplifiers with Tapered-Waveguide Structures