Abstract:A novel technique named "the single-well energy representation" is developed for analyzing the valence band structures of strained single or multiple quantum well structurer. Analysis and optimization are performed for 1.55 mu m InGaAs/InGaAsP strained multiple quantum well lasers lattice matched to InP with 1.1 mu m barrier bandgap, and some significant results are obtained. The band offsets are functions of the strain instead of constants. A certain relation exists between the strain and the well width as well as the indium composition in the InGaAs well material. The strain changes the valence band structure and the density of states, and hence affects the properties of the lasers. The compressive strain results in higher peak gain and differential gain of the TE polarization. The minimum threshold current density exists, and the well number is optimized. When the compressive strain is beyond 0.5%, the optimum well number varies slowly, in particular, the minimum threshold current density varies very slightly, and it nearly maintains a constant. The optimum well number and the minimum threshold current density decrease with an increase in the cavity length. For an about 1000 mu m cavity length, the optimum well number is about 1 in the range of compressive strain from 0.4% to 3.0%. In this case the single quantum well laser has the lowest threshold current density.

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

Threshold Characteristics of 1.55-Μm InGaAs/InGaAsP Strain-Compensated Quantum Well Lasers with Zero Net Strain

Effects of Distance Between Wells on Band Structure and Characteristics of InGaAs/InGaAsP Strain-Compensated Multiple Quantum Well Lasers

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Characteristic Analysis Of Ingaas/Ingaasp Strained Quantum Well Lasers

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

Electric fields and valence band offsets at strained [111] heterojunctions

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Comparison of the Band Alignment of Strained and Strain-Compensated Gainnas QWS on Gaas and Inp Substrates

High Temperature Characteristics Of 1.55 Mu M Ingaas/Ingaasp Strain-Compensated Multiple Quantum Well Lasers

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

Gain Characteristics of the Ingaas Strained Quantum Wells with Gaas, Algaas, and Gaasp Barriers in Vertical-External-Cavity Surface-Emitting Lasers

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers