Abstract:We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering. Our calculations demonstrate that structures based on compressively strained In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ quantum wells (QWs) can readily achieve emission wavelengths in the 3 -- 5 $\mu$m range, and that these QWs have large type-I band offsets. As such, these structures have the potential to overcome a number of limitations commonly associated with this application-rich but technologically challenging wavelength range. By considering structures having (i) fixed QW thickness and variable strain, and (ii) fixed strain and variable QW thickness, we quantify key trends in the properties and performance as functions of the alloy composition, structural properties, and emission wavelength, and on this basis identify routes towards the realisation of optimised devices for practical applications. Our analysis suggests that simple laser structures -- incorporating In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ QWs and unstrained ternary In$_{0.53}$Ga$_{0.47}$As barriers -- which are compatible with established epitaxial growth, provide a route to realising InP-based mid-infrared diode lasers.

Comparison of the Band Alignment of Strained and Strain-Compensated Gainnas QWS on Gaas and Inp Substrates

Electric fields and valence band offsets at strained [111] heterojunctions

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Characteristic Analysis Of Ingaas/Ingaasp Strained Quantum Well Lasers

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Gain Characteristics of the Ingaas Strained Quantum Wells with Gaas, Algaas, and Gaasp Barriers in Vertical-External-Cavity Surface-Emitting Lasers

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Inas1-Ysby/Gaxin1-Xsb Broken-Gap Heterostructures For Quantum Cascade Lasers

Study of GSMBE Growth and Characteristics of High-Quality Strained In0.63Ga0.37AsInP Quantum Wells

The Effect of Inserting Strain-Compensated Ganas Layers on the Luminescence Properties of Gainnas/Gaas Quantum Well

Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $μ$m on InP substrates

Efficient band-structure calculations of strained quantum wells

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Threshold Characteristics of 1.55-Μm InGaAs/InGaAsP Strain-Compensated Quantum Well Lasers with Zero Net Strain