Abstract:We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering. Our calculations demonstrate that structures based on compressively strained In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ quantum wells (QWs) can readily achieve emission wavelengths in the 3 -- 5 $\mu$m range, and that these QWs have large type-I band offsets. As such, these structures have the potential to overcome a number of limitations commonly associated with this application-rich but technologically challenging wavelength range. By considering structures having (i) fixed QW thickness and variable strain, and (ii) fixed strain and variable QW thickness, we quantify key trends in the properties and performance as functions of the alloy composition, structural properties, and emission wavelength, and on this basis identify routes towards the realisation of optimised devices for practical applications. Our analysis suggests that simple laser structures -- incorporating In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ QWs and unstrained ternary In$_{0.53}$Ga$_{0.47}$As barriers -- which are compatible with established epitaxial growth, provide a route to realising InP-based mid-infrared diode lasers.

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Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $μ$m on InP substrates

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

High-performance 1.06-Μm InGaAs/GaAs Double-Quantum-well Semiconductor Lasers with Asymmetric Heterostructure Layers

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Gain Characteristics of the Ingaas Strained Quantum Wells with Gaas, Algaas, and Gaasp Barriers in Vertical-External-Cavity Surface-Emitting Lasers

Comparison of the Band Alignment of Strained and Strain-Compensated Gainnas QWS on Gaas and Inp Substrates

Optimization of 1300 Nm Quantum Well Laser on GaAs Substrates

Low threshold 1.3μm InGaAsP/InP strained compensated multi-quantum well DFB laser grown by LP-MOCVD

Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers