Abstract:The energy spectra of vertically coupled multilayer nanoscale semiconductor quantum dots (QDs) are theoretically studied using a unified three-dimensional (3D) model. The model formulation includes (1) the position-dependent effective mass Hamiltonian in a nonparabolic approximation for electrons, (2) the position-dependent effective mass Hamiltonian in a parabolic approximation for holes, (3) the finite hard wall confinement potential, and (4) Ben Daniel-Duke boundary conditions. To solve a nonlinear problem, a nonlinear iterative method is further improved in our developed 3D QD simulator. At an applied magnetic field (B), we explore the transition energy and the energy band gap of disk (DI)-, ellipsoid (EL)- and cone (CO)-shaped vertically coupled multilayer nanoscale semiconductor quantum dots. We find that the electron transition energy of vertically coupled multilayer InAs/GaAs QDs depends on their shape and is strongly dominated by the number of stacked layers (N). The interdistance (d) among InAs QDs plays a crucial role in the tunable states of these QDs. In DI-shaped vertically coupled 10-layer QDs at B=0 T and d=1.0 nm, we find approximately 40% variation in electron ground state energy, which is larger than that (∼20% variation) in CO-shaped QDs. In QDs at a nonzero magnetic field, the electron transition energy decreases with increasing N. In QDs with d=1 nm, the rate of decrease is low when N>6. This results in QDs with energy band gaps having similar dependences on N. This study implies different applications in magnetooptical phenomena and quantum optical structures.

Structure and Optical Anisotropy of Vertically Correlated Submonolayer Inas/Gaas Quantum Dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Structural, Optical and Intraband Absorption Properties of Vertically Aligned In0.32Ga0.68As/GaAs Quantum Dots Superlattices

Study of Self-organized InAs/GaAs Quantum-dots Using Double Crystal X-ray Diffraction

Optical Anisotropy in Inas Quantum Dots Formed on Gaas Pyramids

Vertically coupled multilayers of self-assembled InAs quantum dots

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Lateral and Vertical Ordered One-Dimensional Ingaas/Gaas Quantum Structures

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Self-organization of the InGaAs/GaAs quantum dots superlattice

Modulation Spectroscopy of Gaas Covered by Inas Quantum Dots

Study of the Polarization Effect in InAs Quantum Dots/GaAs Nanowires

Optical Studies of InAs Quantum Dots in III-V Semiconductors

Two-Dimensional In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth

Transition Energies of Vertically Coupled Multilayer Nanoscale InAs/GaAs Semiconductor Quantum Dots of Different Shapes

Exciton Confinement in Strain-Engineered Metamorphic InAs/InxGa1-xAs Quantum Dots