Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

J He,XD Wang,B Xu,ZG Wang,SC Qu

DOI: https://doi.org/10.1143/jjap.42.1154

IF: 1.5

2003-01-01

Japanese Journal of Applied Physics

Abstract:We report the morphology of an InGaAs nanostructure grown by molecular beam epitaxy via cycled (InAs)n/(GaAs)n monolayer deposition. Atomic force microscopy images clearly show that varying monolayer deposition per cycle has significant influence on the size, density and shape of the InGaAs nanostructure. Low-temperature photoluminescence spectra show the effect of n on the optical quality, and 1.35 µm photoluminescence with a linewidth of only 19.2 meV at room temperature has been achieved in the (InAs)1/(GaAs)1 structure.