Abstract:Journal of Applied Physics, Volume 131, Issue 23, June 2022. This experimental study reports the morphological and optical properties of self-organized quaternary InAlGaAs quantum dots (QDs) grown on GaAs substrates. Atomic force microscopy (AFM) revealed the presence of QDs and their geometry across the sample surface, while the optical properties were verified by photoluminescence (PL) spectroscopy. Temperature-dependent PL measurements were performed for a series of samples with different indium compositions. Unlike conventional quantum well materials, the change in PL peak positions in QD structures exhibits a non-monotonic exotic dependence on temperature. Our AFM data confirm a bimodal distribution of dot sizes as corroborated by calculated thermal activation energies. A rapid decrease in the PL signal at elevated temperatures suggests that thermionic emission and interface defects are the two dominant mechanisms of carrier escape and recombination in these QD structures. Such a quaternary QD-based active region is important for realizing next-generation diode lasers with an emission wavelength shorter than 1 μm.

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

Vertically coupled multilayers of self-assembled InAs quantum dots

Photoluminescence Characteristics of GaAs/AlGaAs Quantum Dot Arrays Fabricated by Dry and Dry-Wet Etching

InAs Self-Assembled Quantum Dots on GaAs/InP by Low-Pressure Metal-Organic Chemical Vapour Deposition

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

InAs Quantum Dots for Quantum Information Processing

Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots

Emission Dynamics of Inas Self-Assembled Quantum Dots with Different Cap Layer Structures

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)