Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Study of Self-organized InAs/GaAs Quantum-dots Using Double Crystal X-ray Diffraction

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Study on the mechanism of ordering growth InAs/InP quantum dots by introducing tensile strained GaAs layer

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers