Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Strain accumulation in InAs/In x Ga 1− x As quantum dots

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate

High Quality Inas Quantum Dots Grown on Patterned Si with A Gaas Buffer Layer

1.3-μm InAs/GaAs quantum dots grown on Si substrates

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

1.3-Mu M Inas/Gaas Quantum Dots Grown On Si Substrates

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Effects Of Internal Strain And External Pressure On Electronic Structures And Optical Transitions Of Self-Assembled Inxga1-Xas/Gaas Quantum Dots: An Experimental And Theoretical Study

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Using the tensile stress field to control quantum dot arrangements

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

The Effects of A Stress Field and Chemical Diffusion on Electronic Behaviour in Inas/Gaas Quantum Dots

Raman scattering of InAs quantum dots on GaAs/InP