Abstract:▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of layer-by-layer growth. Elastic relaxation on the facet edges, renormalization of the surface energy of the facets, and interaction between neighboring islands via the substrate are the driving forces for self-organized growth. The dimensions of the defect-free islands are of the order λ B , the de Broglie wavelength, and provide three-dimensional quantum confinement of carriers. Self-organized In(Ga)As/GaAs quantum dots, or quantum boxes, are grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and are being incorporated in microelectronic and opto-electronic devices. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III–V semiconductors and other material systems. Much progress has been made in the area of growth, where focus has been on size control, and on optical characterization, where the goal has been the application to lasers and detectors. The unique carrier dynamics in the dots, characterized by femtosecond pump-probe spectroscopy, has led to novel device applications. This article reviews the growth and electronic properties of InGaAs quantum dots and the characteristics of interband and intersublevel lasers and detectors and modulation devices.

Using the tensile stress field to control quantum dot arrangements

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XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

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Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

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The influence of surface stress on the equilibrium shape of strained quantum dots