Abstract:In this paper we show how to link the electronic structures of two III-V systems, one a direct gap material, GaAs, and the other an indirect gap material, GaP, from their bulks right down to the shape of thin nanowires. GaAs and GaP bulk and nanowire systems are studied in the zincblende and wurtzite structures both free of strain and subjected to biaxial strains perpendicular to the [111]/[0001] direction. We provide an interpretation of the band structure of nanowires, grown along the [111] (zinc-blende structure) and the [0001] (wurtzite structure) directions, in terms of the bulk band structures of the corresponding binary compounds. The procedure reveals the origin of the valence and conduction valleys relevant to determine the nature (direct or indirect) of the band gaps and the kind (direct and pseudodirect) of the valence to conduction transitions. Thus, by calculating only the bulk bands it is possible to describe the behavior of the nanowire bands even for very thin nanowires. The effects on the band structures due to biaxial strain are analogously analyzed, providing for bulk GaP the first results in literature. The role of confinement, and surface relaxation, in determining the nanowire electronic structure of thin nanowires are analyzed separately revealing that the change in the nature of the band gap is due mainly to surface relaxation effects, not confinement. We show that the change for indirect/direct of the gap from the bulk to the 1D systems is mainly due to the competition between the energies of bulk conduction valleys which are differently inuenced by confinement and strain. While the main effect of confinement is to open all gaps it is not necessarily the main cause of the direct/indirect change in the nature of the electronic gap as instead is usually claimed in the literature.

Effect of Wire Width on Strain Distribution and Bandgap in Quantum-Wire Nanostructures Based on Continuum Elasticity Theory

Analysis of strain energy in nanowire heterostructures with component gradient buffer section

Theoretical Analysis Of Electric Field Effect On Young'S Modulus Of Nanowires

Molecular Dynamics Simulation of the Elastic Properties of Metal Nanowires in a Transverse Electric Field

Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Bandstructures of unstrained and strained silicon nanowire

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

Effects of inhomogeneous strain of quantum-well structures on the band-structure and gain

Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

Colloidal GaAs quantum wires: solution-liquid-solid synthesis and quantum-confinement studies.

Linear Strain-Gradient Effect on the Energy Bandgap in Bent Cds Nanowires

Analytical Solution of the Stress Inside a Trigonal Quantum-Wire Structure in an Infinite Matrix

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Effect of strain on space charge layer in GaN nanowires investigated by in-situ off-axis electron holography

Elastic and Electric Fields in Quantum Wire/Dot Nanostructures via the Perturbation Theory

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

The Bandgap Distribution Investigated Across the Strain-Induced Bending ZnO Nanowire