Abstract:We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective mass theory, the probability distributions of the band states in the [001]-oriented nanowires with a square cross section and the [111]-oriented nanowires with a hexagonal cross section show characteristic patterns with symmetries closely related to the irreducible representations of the relevant double point groups and, in general, go beyond the prediction of a simple one-band effective mass theory. We also investigate the effects of quantum confinement on the band structures of the [001]- and [111]-oriented InSb and GaSb nanowires and present an empirical formula for the description of quantization energies of the band edge states in the nanowires, which could be used to estimate the enhancement of the band gaps of the nanowires as a result of quantum confinement. The size dependencies of the electron and hole effective masses in these nanowires are also investigated and discussed.

Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires

Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires

Manipulation of Band Structures in Wurtzite and Zinc-Blende GaAs/InAs-core-shell Nanowires

Electronic Structures of [001]- and [111]-Oriented Insb and Gasb Free-Standing Nanowires

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

Electronic Structure of [100]-Oriented Free-Standing Inas and Inp Nanowires with Square and Rectangular Cross Sections

Elastic limit and relaxation of GaAs/In(Al,Ga)As core/shell nanowires for near-infrared applications

Strain Relaxation and Band-Gap Tunability in Ternary Inxga1-Xn Nanowires

k.p theory of freestanding narrow band gap semiconductor nanowires

Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires

Structural Properties and Energetics of Gaas Nanowires

Electronic Structure of Nanometer-Scale Semiconductor Wires

Systematic strain-induced bandgap tuning in binary III-V semiconductors from density functional theory

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

Band Engineering in Strained Gan/Ultrathin Inn/Gan Quantum Wells

Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial tensile stress

Extracting Band Structure Characteristics of GaSb/InAs Core-Shell Nanowires from Thermoelectric Properties