Abstract:The modification of the nature and size of bandgaps for III-V semiconductors is of strong interest for optoelectronic applications. Strain can be used to systematically tune the bandgap over a wide range of values and induce indirect-to-direct (IDT), direct-to-indirect (DIT), and other changes in bandgap nature. Here, we establish a predictive ab initio approach, based on density functional theory, to analyze the effect of uniaxial, biaxial, and isotropic strain on the bandgap. We show that systematic variation is possible. For GaAs, DITs were observed at 1.52% isotropic compressive strain and 3.52% tensile strain, while for GaP an IDT was found at 2.63% isotropic tensile strain. We additionally propose a strategy for the realization of direct-indirect transition by combining biaxial strain with uniaxial strain. Further transition points were identified for strained GaSb, InP, InAs, and InSb and compared to the elemental semiconductor silicon. Our analyses thus provide a systematic and predictive approach to strain-induced bandgap tuning in binary III-V semiconductors.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the problem of systematically modulating the band - gap properties and magnitudes in III - V binary semiconductor materials through strain engineering. Specifically, the authors hope to establish a predictive method through density functional theory (DFT) to analyze the effects of uniaxial, biaxial, and isotropic strains on the band - gap. This includes not only the change in the band - gap width but also the transition from direct - to - indirect band - gap (Direct - to - Indirect Transition, DIT) or from indirect - to - direct band - gap (Indirect - to - Direct Transition, IDT).
### Background and Objectives of the Paper
- **Background**: III - V semiconductor materials have received extensive attention due to their wide applications in optoelectronics and integrated circuits. The optical properties of these materials are mainly determined by their band - gaps. Therefore, adjusting the band - gaps of materials to meet the requirements of specific applications is an important goal in both fundamental and applied research.
- **Objective**: Through strain engineering, systematically modulate the band - gap properties of III - V binary semiconductor materials, especially to achieve the conversion between direct and indirect band - gaps. This can not only broaden the application range of materials but also provide guidance for future experimental work.
### Research Methods
- **Theoretical Method**: Use the computational method based on density functional theory (DFT), especially the TB09 exchange - correlation functional, to simulate the effects of different types of strains (uniaxial, biaxial, and isotropic strains) on the material band - gaps.
- **Model**: Studied two materials, GaAs and GaP, which have broad application prospects in microelectronics, solar cells, laser technology, and LEDs. In addition, selective studies were also carried out on materials such as Si, GaSb, InP, InAs, and InSb.
### Main Findings
- **GaAs**:
- **Isotropic Strain**: A transition from direct - to - indirect band - gap (DIT) was observed under - 1.56% compressive strain, and a transition from semiconductor to metal (SMT) was observed under + 6.78% tensile strain.
- **Biaxial Strain**: DIT was observed under + 3.52% tensile strain, and a transition from semiconductor to semimetal (SsMT) was observed under + 8.00% tensile strain.
- **Uniaxial Strain**: Similar to the biaxial strain results.
- **Combined Strain**: By combining biaxial and uniaxial strains, the transition from direct - to - indirect band - gap can be achieved, especially in cases where it cannot be achieved under biaxial compressive strain.
- **GaP**:
- **Isotropic Strain**: A transition from indirect - to - direct band - gap (IDT) was observed under + 2.63% tensile strain.
- **Biaxial Strain**: The band - gap properties remained unchanged throughout the strain range, but a transition from semiconductor to semimetal (SsMT) was observed at high strain values.
- **Other Materials**:
- **Si**: IDT was observed under + 10.31% tensile strain.
- **GaSb, InP, InAs, InSb**: DIT was observed under different strain conditions, and the specific strain values are shown in Table 2.
### Conclusion
This study established a predictive model through density functional theory and successfully analyzed the effects of different types of strains on the band - gaps of III - V binary semiconductor materials. These results not only provide an important reference for theoretical research but also provide guidance for experimental design and material applications. In particular, through the method of combined strains, the precise regulation of band - gap properties can be achieved experimentally.