Abstract:InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0 degrees, 2 degrees and 15 degrees towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0 degrees, 2 degrees and 15 degrees misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0 degrees case. An extra emission was observed from the 2 degrees and 15 degrees off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0 degrees surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.

Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Growth of Nano-Structures on Composition-Modulated Inalas Surfaces

Morphology and Wetting Layer Properties of InAs/GaAs Nanostructures

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells

Multilayer Self-Organization of InGaAs Quantum Wires on GaAs Surfaces

Wetting layers effect on InAs/GaAs quantum dots

The Transition from Two-Stage to Three-Stage Evolution of Wetting Layer of Inas/Gaas Quantum Dots Caused by Postgrowth Annealing

Influence of Substrate Misorientation on the Photoluminescence and Structural Properties of InGaAs/GaAsP Multiple Quantum Wells.

Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates

Role of the wetting layer in the crystallization stage during droplet epitaxy of InAs/GaAs nanostructures

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

Different Growth Mechanisms of Bimodal InAs/GaAs QDs

Crystallography of Phase Transformation in the Self-Inclined Inas Nanowires Grown on Gaas{111}

Research on Wet Etching Techniques for Very Long-Wavelength InAs/GaSb Superlattices

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Real-space Light-Reflection Mapping of Atomically Thin WSe2 Flakes Revealing the Gradient Local Strain