Abstract:In this work, we developed pre-grown annealing to form β2 reconstruction sites among β or α (2 × 4) reconstruction phase to promote nucleation for high-density, size/wafer-uniform, photoluminescence (PL)-optimal InAs quantum dot (QD) growth on a large GaAs wafer. Using this, the QD density reached 580 (860) μm-2 at a room-temperature (T) spectral FWHM of 34 (41) meV at the wafer center (and surrounding) (high-rate low-T growth). The smallest FWHM reached 23.6 (24.9) meV at a density of 190 (260) μm-2 (low-rate high-T). The mediate rate formed uniform QDs in the traditional β phase, at a density of 320 (400) μm-2 and a spectral FWHM of 28 (34) meV, while size-diverse QDs formed in β2 at a spectral FWHM of 92 (68) meV and a density of 370 (440) μm-2. From atomic-force-microscope QD height distribution and T-dependent PL spectroscopy, it is found that compared to the dense QDs grown in β phase (mediate rate, 320 μm-2) with the most large dots (240 μm-2), the dense QDs grown in β2 phase (580 μm-2) show many small dots with inter-dot coupling in favor of unsaturated filling and high injection to large dots for PL. The controllable annealing (T, duration) forms β2 or β2-mixed α or β phase in favor of a wafer-uniform dot island and the faster T change enables optimal T for QD growth.

The Transition from Two-Stage to Three-Stage Evolution of Wetting Layer of Inas/Gaas Quantum Dots Caused by Postgrowth Annealing

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

Mechanism of Quantum Dot Formation by Postgrowth Annealing of Wetting Layer

The Effect of Post-Growth Rapid Thermal Annealing on InAs/InGaAs Dot-in-a-well Structure Monolithically Grown on Si

Influence of High-Temperature Postgrowth Annealing under Different Ambience on Gan Quantum Dots Grown Via Ga Droplet Epitaxy

Wetting layers effect on InAs/GaAs quantum dots

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Evolution of Inas Quantum Dots During Annealing Process

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate

Different Growth Mechanisms of Bimodal InAs/GaAs QDs

Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping

Growth of High Density Self-Assembled InAs Quantum Dots on As-pressure-modulated InAlAs Multilayer Structures on InP(001) Substrate

Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy

In Situ Annealing Enhancement of the Optical Properties and Laser Device Performance of InAs Quantum Dots Grown on Si Substrates.

Surface modification on InAs wetting layer by in-situ pulsed laser and the effets on quantum dot growth

In Situ Accurate Control of 2D-3D Transition Parameters for Growth of Low-Density InAs/GaAs Self-Assembled Quantum Dots

Combined Optical And Electrical Studies Of The Effects Of Annealing On The Intrinsic States And Deep Levels In A Self-Assembled Inas Quantum-Dot Structure

Evolution of InAs/GaAs quantum dots morphology with different InAs supply

Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Competitive Emissions of InAs (qds)/gainasp/inp Grown by GSMBE