In Situ Accurate Control of 2D-3D Transition Parameters for Growth of Low-Density InAs/GaAs Self-Assembled Quantum Dots

Mi-Feng Li,Ying Yu,Ji-Fang He,Li-Juan Wang,Yan Zhu,Xiang-jun Shang,Hai-Qiao Ni,Zhi-Chuan Niu
DOI: https://doi.org/10.1186/1556-276x-8-86
2013-01-01
Nanoscale Research Letters
Abstract:A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.
What problem does this paper attempt to address?