Abstract:We report the solid source molecular beam epitaxial growth of InAs/InP quantum dot (QD) superlattices and the effect of As/P exchange on the interface between InAs and InP. The InAs QDs were found to have an average lateral diameter of similar to 40nm and a density of 3-4 x 10(9)cm(-2). The QDs superlattice has photoluminescence (PL) emission centred at 0.77eV with a linewidth of 64meV at low temperature (4K). X-ray diffraction (XRD) spectra showed evidence of significant As/P exchange on the interface between InAs and InP during in situ annealing under Pt pressure before growing the spacer layer of InP. An average P composition of similar to 30% in the resulting InAsP QDs in samples: annealed for 50s was deduced from dynamical simulations of the experimental XRD spectra. The QDs superlattice PL emission exhibits a blueshift following an increase in annealing time, and emission at 1.55 mum and at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelengths. (C) 2001 Elsevier Science B.V. All rights reserved.

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

Spontaneously Ordered InAs Self-Assembled Quantum Dots Grown on GaAs/InP Substrate

Structural and Optical Characterization of Inas Nanostructures Grown on (001) and High Index Inp Substrates

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Self-Organized Inas Quantum Dots Formation By As/P Exchange Reaction On (001) Inp Substrate

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Structural and Optical Characteristics of Self-Organized InAs Quantum Dots Grown on GaAs (311)A Substrates

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Inas Self-Assembled Nanostructures Grown on Inp(001)

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Grid-pattern Aligned InAs Self-Assembled Quantum Dots Grown on InP Substrate

Selective Growth of InAs Islands on Patterned GaAs (100) Substrate

Growth And Emission Tuning Of Inas/Inp Quantum Dots Superlattice

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy

Lateral Ordered InGaAs Self-Organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy