Grid-pattern Aligned InAs Self-Assembled Quantum Dots Grown on InP Substrate

YUHENG Peng,BENZHONG Wang,WEIYOU Chen,SHIYONG Liu

DOI: https://doi.org/10.1023/a:1018594003918

IF: 3

1997-01-01

Optical and Quantum Electronics

Abstract:We present a method to control the nucleation sites of InAs self-assembled quantum dots (QDs). Tensile-strained material, such as GaAs used here, was grown on InP substrates before InAs deposition. This thin GaAs layer can provide a surface with grid-pattern trenches which have the same function as atomic-steps and are promising for the formation of QDs with controlled nucleation sites. Atom force microscopy (AFM) measurement was performed and the AFM images indicate that the InAs islands grown with our technique are grid-pattern aligned and have good homogeneity and low size fluctuation. In addition, another kind of three-dimensional structure with larger size would coexist with normal QDs if a 30nm thick GaAs layer was deposited.