Ordering InAs islands grown on (001) InP substrate controlled by using tensile strained GaAs layer

Benzhong Wang,Fanghai Zhao,Yuheng Peng,Shiyong Liu

1998-01-01

Abstract:A new method to form ordered InAs quantum dots is presented. By using GaAs tensile strained layer on (001) InP substrate, two-dimensional-alignment InAs islands are obtained on GaAs layer grown by LP-MOCVD.

What problem does this paper attempt to address?

Study on the mechanism of ordering growth InAs/InP quantum dots by introducing tensile strained GaAs layer

Jing-zhi YIN,Xin-qiang WANG,Xian-jie LI,Guo-tong DU,Shuren ZHANG

DOI: https://doi.org/10.3969/j.issn.1007-4252.2000.04.005

2000-01-01

Abstract:In the paper we analyze the mechanism of ordering growth InAs/InP quantum dots(islands) on undulational surface and point out that the tensile strain layer controls the arrangement of InAs/InP self-assembled quantum dots. Ordering InAs quantum dot on tensile strained GaAs layer on InP substrate is achieved.
Spontaneously Ordered InAs Self-Assembled Quantum Dots Grown on GaAs/InP Substrate

BZ Wang,YH Peng,FH Zhao,WY Chen,SY Liu,CX Gao

DOI: https://doi.org/10.1016/s0022-0248(97)00475-2

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:In this paper, we present a method to control the nucleation sites of InAs self-assembled quantum dots (QDs). Tensile strained material, such as GaAs used here was grown on InP substrate before InAs deposition. This thin GaAs layer can provide a surface with gridded trenches which have the same function as atomic steps and are promising for the formation of QDs with nucleation sites controlled. Atomic-force microscopy measurement was performed and the AFM images indicate that the InAs islands grown with our technique is grid aligned and have good homogeneity and low-size fluctuation. In addition, another kind of three-dimensional structure with larger size would co-exist with normal QDs if 30nm thick GaAs layer were deposited.
Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

JZ Yin,XQ Wang,ZY Yin,MT Li,ZT Li,GT Du,SR Yang

DOI: https://doi.org/10.1016/s0030-3992(01)00070-6

2001-01-01

Abstract:We study the mechanism of ordered growth of InAs quantum dots (islands) on a GaAs/InP substrate in theory and point out that the tensile strain can be used to control InAs/InP self-assembled quantum dots arrangement. Photoluminescence spectrum, and atomic force microscopy images have been investigated. In the experiment, ordered InAs islands have been obtained and the maximum density of quantum dots is 1.6×1010cm−2 at 4 monolayers InAs layer.
Orthogonal Alignment Inas Islands Formation On Gaas Tensile Strained Layer Grown On (001) Inp Substrate By Low Pressure Metal-Organic Chemical Vapor Deposition

Chun-xiao Gao,Ben-zhong Wang,Bing-bing Liu,Shi-yong Liu,Guang-tian Zou

DOI: https://doi.org/10.1088/0256-307X/15/11/022

1998-01-01

Chinese Physics Letters

Abstract:Nucleation control is one of the key questions in quantum dots preparation and application. This paper reports the experimental results of orthogonal alignment InAs islands formed on (001) InP substrate by low-pressure metal-organic chemical vapor deposition. As a nucleation control layer, the tensile strained GaAs epilayer with orthogonal trench structure was grown firstly on (001) InP substrate under Stranski-Krastanov growth mode. Then, the InAs islands were grown selectively on the trench edges by using strain effect. This growth technique results in the formation of orthogonal alignment InAs islands without any preprocessing technique prior to the growth.
Selective Growth of InAs Islands on Patterned GaAs (100) Substrate

CX Cui,YH Chen,YY Ren,B Xu,P Jin,C Zhao,ZG Wang

DOI: https://doi.org/10.1016/j.spmi.2005.10.004

IF: 3.22

2006-01-01

Superlattices and Microstructures

Abstract:By a combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid-source molecular beam epitaxy. It is found that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. When a InxGa(1-x)As strained layer is grown first before InAs deposition, almost all the InAs quantum dots are deposited at the edges of the top ridge. And when the InAs deposition amount is larger, a quasi-quantum wire structure is found. The optical properties of the InAs dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 Elsevier Ltd. All rights reserved.
In-situ Laser Nano-Patterning for Ordered InAs/GaAs(001) Quantum Dot Growth

Wei Zhang,Zhenwu Shi,Dayun Huo,Xiaoxiang Guo,Feng Zhang,Linsen Chen,Qinhua Wang,Baoshun Zhang,Changsi Peng

DOI: https://doi.org/10.1063/1.5016096

IF: 4

2018-01-01

Applied Physics Letters

Abstract:A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.
Grid-pattern Aligned InAs Self-Assembled Quantum Dots Grown on InP Substrate

YUHENG Peng,BENZHONG Wang,WEIYOU Chen,SHIYONG Liu

DOI: https://doi.org/10.1023/a:1018594003918

IF: 3

1997-01-01

Optical and Quantum Electronics

Abstract:We present a method to control the nucleation sites of InAs self-assembled quantum dots (QDs). Tensile-strained material, such as GaAs used here, was grown on InP substrates before InAs deposition. This thin GaAs layer can provide a surface with grid-pattern trenches which have the same function as atomic-steps and are promising for the formation of QDs with controlled nucleation sites. Atom force microscopy (AFM) measurement was performed and the AFM images indicate that the InAs islands grown with our technique are grid-pattern aligned and have good homogeneity and low size fluctuation. In addition, another kind of three-dimensional structure with larger size would coexist with normal QDs if a 30nm thick GaAs layer was deposited.
&Itin&It-&Itsitu&It Laser Nano-Patterning For Ordered Inas/Gaas(001) Quantum Dot Growth

Wei Zhang,Zhenwu Shi,Dayun Huo,Xiaoxiang Guo,Feng Zhang,Linsen Chen,Qinhua Wang,Baoshun Zhang,Changsi Peng

DOI: https://doi.org/10.1063/1.5016096

IF: 4

2018-01-01

Applied Physics Letters

Abstract:A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication. Published by MP Publishing.
Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Z Jin,SR Yang,BB Liu,MT Li,XQ Wang,ZT Li,GT Du,SY Liu

DOI: https://doi.org/10.1016/s0925-3467(99)00139-1

IF: 3.754

2000-01-01

Optical Materials

Abstract:The InAs quantum dots on thin tensile-strained GaAs layer on InP (001) substrate are grown by LP-MOVPE. Approximately 2 nm GaAs tensile-strained layer is first grown on InP substrate, then 2 monolayer (ML) InAs for sample A, 4 ML for sample B, 6 ML for sample C and 8 ML for sample D are deposited. An atomic force microscope (AFM) is used to study the behavior of the InAs quantum dots. For sample A, two types of InAs islands are observed. Strain-induced grooves appear on the surface. For the other three samples, the InAs islands arrange along two orthogonal directions and the island density decreases with an increase in the amount of InAs material. The density of sample B is as high as 1.9×1010cm−2, the densities are 1.39×1010and0.79×1010cm−2 for samples C and D, respectively. Furthermore, the base shape changes for different samples. For samples A and B, the base shapes are round; for sample C, the base changes into ellipsis; but for sample D, the base changes into triangle. The base area increases with an increase in the deposition of InAs. We also investigate the PL spectrum of InAs QDs with GaAs and with it and find that the QDs quality is higher with GaAs layer.
Self-Organized Inas Quantum Dots Formation By As/P Exchange Reaction On (001) Inp Substrate

Benzhong Wang,Fanghai Zhao,Yuheng Peng,Zhi Jin,Yudong Li,Shiyong Liu

DOI: https://doi.org/10.1063/1.121396

IF: 4

1998-01-01

Applied Physics Letters

Abstract:In this letter, we present the results of InAs quantum dots (QDs) prepared on a (001) InP substrate. As/P exchange reaction at the surface of InP buffer was used to form the InAs islands in the reactor of low pressure metalorganic chemical vapor deposition at 600 degrees C. Preliminary characterizations of the InAs QDs have been investigated by using atomic force microscopy and photoluminescence (PL). Room temperature PL emission from the 0-dimensional system centers at 1520 nm and the full width at half maximum of the PL is 92 meV. (C) 1998 American Institute of Physics. [S0003-6951(98)01919-6].
Using the tensile stress field to control quantum dot arrangements

Zhi Jin,Benzhong Wang,Yuheng Peng,Fanghai Zhao,Weiyou Chen,Shiyong Liu,Chunxiao Gao

DOI: https://doi.org/10.1016/S0039-6028(98)00934-0

IF: 1.9

1999-01-01

Surface Science

Abstract:In this paper, a tensile-strained layer is used to control the quantum dot arrangements. A 3 nn GaAs tensile-strained layer is grown on InP (001) substrate, and a four-monolayer InAs compressed layer is then grown on top by LP-MOVPE. Atomic force microscopy (AFM) measurements were performed. AFM images indicate that the InAs quantum dots are arranged along two orthogonal directions, their diameter is about 30 nm, the size fluctuation is only 10%, and their density is 8.8 x 10(9) cm(-2), which is higher than that grown directly on InP or GaAs substrates. An identical structure, except for the presence of 30 nm of GaAs, was also grown. The islands on top of the 30 nm GaAs are mainly very big and rectangular in shape. We demonstrate that these characteristics originate from the modulated stress held of the GaAs tensile-strained layer. (C) 1999 Elsevier Science B.V. All rights reserved.
Formation of Laterally Ordered Quantum Dot Molecules by in Situ Nanosecond Laser Interference

Yun-Ran Wang,Im Sik Han,Chao-Yuan Jin,Mark Hopkinson

DOI: https://doi.org/10.1063/5.0009847

IF: 4

2020-01-01

Applied Physics Letters

Abstract:We demonstrate the growth and surface characterization of laterally ordered arrays of InAs quantum dot molecules (QDMs) on GaAs (100) substrates produced by a combination of in situ interferometric nanopatterning and molecular beam epitaxy growth. Four-beam ultraviolet laser interference is applied during the growth process resulting in the formation of quasi two-dimensional islands due to localized surface diffusion. With further InAs deposition, the edges of the islands are observed to act as preferential sites for the nucleation of InAs quantum dots. Well-ordered square arrays of lateral QDMs with a period of 300 nm and site occupancy ranging from single dot up to hexa-molecules are obtained by varying the InAs coverage from 1.55 ML to 1.75 ML.
Precise Arrays of Epitaxial Quantum Dots Nucleated by in Situ Laser Interference for Quantum Information Technology Applications

Yun Ran Wang,Im Sik Han,Chao-Yuan Jin,Mark Hopkinson

DOI: https://doi.org/10.1021/acsanm.0c00738

2020-01-01

Abstract:Precisely ordered arrays of InAs quantum dots are formed on a nanoisland-structured GaAs (100) surface using in situ laser interference during self-assembled molecular beam epitaxial growth. Nanoislands induced by single-pulse four-beam laser interference act as preferential nucleation sites for InAs quantum dots and result in site occupation dependent on the size of nanoislands, the InAs coverage, and the laser parameters. By optimizing the growth and interference conditions, regular dense ordering of single dots was obtained for the first time using this in situ noninvasive approach. The photoluminescence spectra of the resulting quantum dot arrays with a period of 300 nm show good optical quality and uniformity. This technique paves the way for the rapid large-scale fabrication of arrays of single dots to enable quantum information technology device platforms.
Atomic Structures of Two-Dimensional Strained Inas Epitaxial Layers on A Gaas(001) Surface: in Situ Observation of Quantum Dot Growth

R. Z. Bakhtizin,Y. Hasegawa,Q. -K. Xue,T. Sakurai

DOI: https://doi.org/10.1134/1.1334990

2000-01-01

Journal of Experimental and Theoretical Physics

Abstract:Scanning tunneling microscopy and reflection high-energy electron diffraction under ultrahigh vacuum conditions were used to make an in situ study of atomic structures at the surface of an InAs/GaAs heterostructure grown by molecular-beam epitaxy. It was observed that the deposition of approximately 0.3 ML of indium on an arsenic-enriched GaAs(001)-2 × 4 surface leads to the formation of the 4 × 2 phase while the deposition of 0.6 ML indium leads to the appearance of a new 6 × 2 reconstruction. It is shown that layer-by-layer two-dimensional epitaxial growth of InAs on GaAs(001) as far as 13 monolayers can only be achieved if the growth front reproduces the 4 × 2 or 6 × 2 symmetry of the substrate and models of 4 × 2 and 6 × 2 reconstructions are proposed. Atomic-resolution images of faceted planes on the surface of three-dimensional islands in an InAs/GaAs(001) system were obtained for the first time and structural models of these were developed.
Two-dimensional Ordering of Self-Assembled InxGa1−xAs Quantum Dots Grown on GaAs(311)B Surfaces

HZ Xu,WH Jiang,B Xu,W Zhou,ZG Wang

DOI: https://doi.org/10.1016/s0022-0248(99)00286-9

IF: 1.8

1999-01-01

Journal of Crystal Growth

Abstract:The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.
High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

Y. Wang,J. Zou,Z. M. Zhao,Z. Hao,K. L. Wang

DOI: https://doi.org/10.1088/0957-4484/20/30/305301

IF: 3.5

2009-01-01

Nanotechnology

Abstract:Ordered and dense InAs quantum dots grown on patterned Si(100) with a thin GaAs buffer layer have been investigated by transmission electron microscopy and electron energy loss spectroscopy. {111} faceted InAs quantum dots with good crystallinity were observed on top of the underlying GaAs buffer layer. It was revealed that the GaAs buffer layer and the lateral expansion of InAs have played key roles in releasing the misfit strain between InAs and Si and suppressing the formation of lattice defects in InAs quantum dots. These results suggest a possible pathway for the strain relaxation in the formation of quantum dots.
A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

J. Bauer,D. Schuh,E. Uccelli,R. Schulz,A. Kress,F. Hofbauer,J. J. Finley,G. Abstreiter

DOI: https://doi.org/10.48550/arXiv.cond-mat/0403328

2004-03-13

Abstract:We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

Mesoscale and Nanoscale Physics
Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Yf Li,Jz Wang,Xl Ye,B Xu,Fq Liu,D Ding,Jf Zhang,Zg Wang

DOI: https://doi.org/10.1063/1.1350616

IF: 2.877

2001-01-01

Journal of Applied Physics

Abstract:Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. (C) 2001 American Institute of Physics.
Formation of Lateral-Two-dimensional Ordering in Self-Assembled InGaAs Quantum Dot on High Index Substrates

K Akahane,HZ Xu,Y Okada,M Kawabe

DOI: https://doi.org/10.1016/s1386-9477(01)00182-5

2001-01-01

Abstract:The in-plane strain relaxation properties on InGaAs/GaAs(311)B were investigated by means of reciprocal space mapping using triple axis X-ray diffractometry to study the origin of two-dimensional ordering of InGaAs quantum dots (QDs) on a GaAs(311)B substrate. From the X-ray data, the strain relaxation anisotropy in the InGaAs layer was observed to be larger on the GaAs(311)B substrate than on (001). It is proposed that the large strain anisotropy is responsible for the QD ordering observed on the (311)B surface.
Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate

C.X. Cui,Y.H. Chen,P. Jin,B. Xu,Y.Y. Ren,C. Zhao,Z.G. Wang

DOI: https://doi.org/10.1016/j.physe.2005.09.006

2006-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:By combination of prepatterned substrate and self-organized growth, InAs islands are grown on the stripe-patterned GaAs (100) substrate by solid source molecular beam epitaxy. Four [011¯] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. The surface morphology obtained by atomic force microscopy shows that the InAs quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. The mechanism determining the nucleation position of the InAs dots is discussed. The optical properties of the InAs dots on the patterned substrates are also investigated by photoluminescence.

Ordering InAs islands grown on (001) InP substrate controlled by using tensile strained GaAs layer

Study on the mechanism of ordering growth InAs/InP quantum dots by introducing tensile strained GaAs layer

Spontaneously Ordered InAs Self-Assembled Quantum Dots Grown on GaAs/InP Substrate

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Orthogonal Alignment Inas Islands Formation On Gaas Tensile Strained Layer Grown On (001) Inp Substrate By Low Pressure Metal-Organic Chemical Vapor Deposition

Selective Growth of InAs Islands on Patterned GaAs (100) Substrate

In-situ Laser Nano-Patterning for Ordered InAs/GaAs(001) Quantum Dot Growth

Grid-pattern Aligned InAs Self-Assembled Quantum Dots Grown on InP Substrate

&Itin&It-&Itsitu&It Laser Nano-Patterning For Ordered Inas/Gaas(001) Quantum Dot Growth

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Self-Organized Inas Quantum Dots Formation By As/P Exchange Reaction On (001) Inp Substrate

Using the tensile stress field to control quantum dot arrangements

Formation of Laterally Ordered Quantum Dot Molecules by in Situ Nanosecond Laser Interference

Precise Arrays of Epitaxial Quantum Dots Nucleated by in Situ Laser Interference for Quantum Information Technology Applications

Atomic Structures of Two-Dimensional Strained Inas Epitaxial Layers on A Gaas(001) Surface: in Situ Observation of Quantum Dot Growth

Two-dimensional Ordering of Self-Assembled InxGa1−xAs Quantum Dots Grown on GaAs(311)B Surfaces

High Quality InAs Quantum Dots Grown on Patterned Si with a GaAs Buffer Layer.

A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Formation of Lateral-Two-dimensional Ordering in Self-Assembled InGaAs Quantum Dot on High Index Substrates

Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate