Abstract:Four types of self-assembled InAs/GaAs quantum dots (QDs) were grown by molecular beam epitaxy and studied via temperature-dependent and time-resolved photoluminescence (PL) spectroscopy measurements. A thin InGaAs stain reducing layer (SRL) is adopted which extends the emission wavelength to 1.3 μm and the influence of strain on QDs is investigated. The SRL releases the strain between the wetting layer and QDs, and enlarges the size of QDs, as shown by atomic force microscopy measurements. As the thickness of InAs layer decreases to 1.7 ML, the QDs with the SRL are chained to strings and the density of QDs increases significantly, which leads to an abnormal redshift of 1.3 μm PL peak at room temperature. PL peaks of InAs QDs with the SRL show redshift compared with the QDs directly deposited on GaAs matrix. The dependences of PL lifetime on the QD size, density and temperature (T) are systematically studied. It is observed that the PL lifetime of QDs is insensitive to T below 50 K. Beyond 50 K, increases and then drops at higher temperature, with a peak at TC, which was determined by the SRL and the thickness of InAs. We have also observed an obvious PL spectral redshift of the QDs with 1.7 ML InAs coverage on SRL at low T as the measuring time delays. The PL lifetime of QDs with the SRL is smaller than that of QDs without the SRL. The QDs with different densities have different PL lifetime dependence on the QDs size. These observations can be explained by the competition between the carrier redistribution and thermal emission.

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

Structural and Optical Characteristics of Self-Organized InAs Quantum Dots Grown on GaAs (311)A Substrates

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Temperature Dependent and Time-Resolved Photoluminescence Studies of Inas Self-Assembled Quantum Dots with Ingaas Strain Reducing Layer Structure

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Two-dimensional Ordering of Self-Assembled InxGa1−xAs Quantum Dots Grown on GaAs(311)B Surfaces

Lateral Ordered InGaAs Self-Organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Optical and material characteristics of InAs/GaAs quantum dots