Different Growth Mechanisms of Bimodal InAs/GaAs QDs

G. Y. Zhou,Y. H. Chen,X. L. Zhou,B. Xu,X. L. Ye,Z. G. Wang

DOI: https://doi.org/10.1016/j.physe.2010.08.001

IF: 3.369

2010-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:In this work, we have adopted photoluminescence (PL) to study the evolution of self-assembled InAs/GaAs quantum dots (QDs) as a function of InAs deposition amount. With increasing InAs amount, the QDs transfer from unimodal to bimodal size distribution. Moreover, the PL peak of small-size QDs gradually deviates from the well-known anomalous temperature dependency of QDs, and follows the InAs intrinsic bandgap redshift at large deposition amount, whereas the PL peak of large-size QDs demonstrates the anomalous temperature dependency within the investigated deposition range. This indicates the small-size QDs are progressively detached from WL. The observations are interpreted with respect to different growth mechanisms of the two QDs families: the large-size QDs locate on the terraces and expand their sizes at the expense of the floating indium atoms, and the small-size QDs are at the step edges and grow by eroding WL.