Abstract:InAsSb islands/quantum dots (QDs) emitting at wavelength >2.8 mu m were self-assembled on InP substrate by using metal-organic chemical vapor deposition (MOCVD). Instead of using arsine, the safer organic tert-butylarsine (TBAs) was used as the arsenic source in the growth process. Effects of the growth conditions, i.e. substrate temperature and the growth rate, on the InAsSb QD formations have been studied. A narrow temperature window from 450 degrees C to 470 degrees C was found for growing high quality InAsSb QDs. InAsSb rings instead of islands/dots were formed using the conventional Stranski-Krastanow (S-K) growth mode if the growth rate was low or if InAsSb was grown for a longer time. By increasing the V : III ratio for the InAsSb growth, InAsSb islands/dots were formed with the same growth rate. To reduce the dot size and increase the InAsSb QD density, an alternative interruption growth (AIG) method was proposed and investigated. Using the AIG growth method, much higher dot density of the InAsSb QDs has been achieved, about 3 x 10(9) cm(-2), which is about 10 times of that of the QDs grown by using the conventional S-K growth method. Strong photoluminescence emissions of the InAsSb islands/dots were observed. At room temperature, the emission wavelength of the InAsSb islands/dots was measured at >2.8 mu m.

Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Different Growth Mechanisms of Bimodal InAs/GaAs QDs

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

The effects of growth interruptions in the GaAsBi/InAs/GaAs quantum dots: The emergence of three-phase nanoparticles

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Growth Optimization of Self-Organized InSb/InAs Quantum Dots

Mid-infrared emissive InAsSb quantum dots grown by metal-organic chemical vapor deposition

Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Effect of substrate temperature and annealing on InAs quantum dots grown by droplet epitaxy

The Effect of a Combined InAlAs and GaAs Strained Buffer Layer on the Structure and Optical Property of InAs Quantum Dots

Uniform InAs quantum-dots on vicinal GaAs (100) substrates by pulsed atomic layer epitaxy via metal-organic chemical vapor deposition

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

Structural and Optical Characteristics of Self-Organized InAs Quantum Dots Grown on GaAs (311)A Substrates

Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band

Growth and Characterization of InAs 1-X Sb X with Different Sb Compositions on GaAs Substrates