The Influence of Growth Parameters of Strain InGaAs Quantum Wells on Luminescent Properties
Lei Gu,Juan Meng
DOI: https://doi.org/10.1007/s11664-021-09394-6
IF: 2.1
2022-01-12
Journal of Electronic Materials
Abstract:InGaAs/GaAs single quantum wells (QWs) were grown on oriented GaAs substrates by metal-organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement at room temperature was applied to characterize the optical properties of QWs. The effects of offcut substrates, growth temperature, growth rate and V/III ratio on optical properties were investigated. For 1060-nm InGaAs/GaAs quantum wells, the results show that when the growth temperature is 600°C, the V/III ratio is 43, and the growth rate is 1.15 µm/h, the quality of the quantum well is better. With the decrease of growth temperature, the PL intensity increased significantly. When the temperature is 600°C, the PL intensity is 121% and 52% higher than the other two samples, respectively. FWHM was reduced by 35% and 46% compared with the other two samples, respectively. When the growth rate increased, the PL intensity enhanced 75%, while the FWHM decreased 5%. It can be found that the FWHM decreased greatly and a blueshift occurred with the increase of the growth rate proving that the crystal quality is greatly improved. Increased V/III ratio can improve the growth quality and optical characteristics of InGaAs/GaAs QWs. The wavelength of samples showed a redshift with increased V/III ratio.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied