Abstract:This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicron mesa that isolated a single quantum dot was fabricated using e-beam lithography and dry etching techniques. Excitation intensity and wavelength dependence of the emission provided information about the nature of the exciton complexes in the dot and the absorption and relaxation of carriers in the structure. The linewidth of the single exciton, and the variation with temperature, was measured. Secondly, samples consisting of a single layer of InGaAs quantum dots incorporated within the intrinsic region of a GaAs/AlGaAs Metal-Insulator-Semiconductor type Schottky structure allowed sequential dot charging via variation of the gate bias. Both n- and p- type samples, grown under similar conditions, were investigated. Single quantum dots were probed through submicron apertures opened in the top metal contact using electron beam lithography and dry etching. The emission undergoes several pronounced changes as additional carriers are sequentially loaded into the dot. The results reveal direct information regarding Coulomb interaction and correlation effects in dots containing a controlled number of excess electrons (up to four) or holes (up to two). Magneto- optical results reveal further information about the few-particle wave functions. A detailed study of the device performance and physical processes in In(Ga)As- Ga(Al)As self-assembled quantum dot lasers showed that these lasers offer several potential advantages over conventional quantum well lasers including low threshold current density, temperature insensitive threshold current density and high differential gain. Device performance (threshold current density and its variation with temperature) has been studied as a function of a number of parameters, including dot density, dot composition and dot confinement potential. The application of large (<14T) magnetic fields has been used to study carrier transport and dot carrier capture effects. When applied along the growth axis, such fields result in an increase in the threshold current density and a decrease in the external quantum efficiency. These effects are attributed to inhibited inplane carrier transport resulting in an increase in the carrier capture efficiency by non-lasing dots. Spontaneously emitted light, recorded via small windows formed in the top metallic contact, has been studied as a function of injection current and temperature. Analysis of this data provides information on non-radiative loss mechanisms and dot carrier dynamics.

Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics (small 31/2016)

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics.

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Improved Optical Performance of InAs Quantum Dot Structure via Suitable Manipulation of GaAs Cap Layer Growth

Growth of High Density Self-Assembled InAs Quantum Dots on As-pressure-modulated InAlAs Multilayer Structures on InP(001) Substrate

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Optical characterisation of III-V semiconductor quantum dots and quantum dot structures

Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate

InAs/InGaP Quantum Dot Solar Cells with an AlGaAs Interlayer

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy

Triggering InAs/GaAs Quantum Dot nucleation and growth rate determination by in-situ modulation of surface energy

Efficient Exciton Transfer from in 0.35 Ga 0.65 As Template into InAs Quantum Dots Grown on GaAs (311) B Substrates

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Self-Organization of High-Density III–V Quantum Dots on High-Index Substrates

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Spontaneously Ordered InAs Self-Assembled Quantum Dots Grown on GaAs/InP Substrate