Abstract:The direct epitaxial growth of GaAs on Si suffers from their nature of lattice mismatch, thermal mismatch and polarity difference induced anti-phase domains (APDs). Here, we report the high quality and thin GaAs film grown on {113}-faceted Ge/Si (001) hollow substrate by in-situ hybrid molecular beam epitaxy. By directly growth of Ge on U-shape patterned Si (001), a strain-relaxed high-quality Ge sawtooth hollow structure with {113} facets was obtained. With an additional 400 nm GaAs deposition, an APD-free surface with a root-mean-square roughness of merely 0.67 nm is obtained on such Ge {113} /Si (001) substrate. The lattice mismatch dislocation between Ge and Si is found to terminate mostly at the sidewalls of the hollow structures. The {113}-faceted Ge surface is acting as an equivalent to the miscut substrate, which annihilates the APDs at the GaAs/Ge interface. High-resolution X-ray diffraction characterization reveals that the hollow structures can effectively reduce the thermal strain, leading to a crack-free GaAs film up to 7 µm. Five-layer InAs/GaAs quantum dots (QDs) on such virtual GaAs/Ge {113} /Si (001) substrate without any dislocation filter layers exhibits almost the same photoluminescence (PL) intensity as that on the GaAs substrate, providing a promising method for integrating III-V QD lasers with silicon photonic platform.

Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Controllable Growth and Optical Properties of Inp and Inp/Inas Nanostructures on the Sidewalls of Gaas Nanowires

Growth and Characterization of Inas Quantum Dots on Inp Nanowires with Zinc Blende Structure

Growth and Photoluminescence of InxGa1−xAs Quantum Dots on the Surface of GaAs Nanowires by Metal Organic Chemical Vapor Deposition

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Realization of Stranski-Krastanow InAs quantum dots on nanowire-based InGaAs nanoshells

Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics (small 31/2016)

Growth of Isolated InAs Quantum Dots on Core-Shell GaAs/InP Nanowire Sidewalls by MOCVD

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Growth of High Density Self-Assembled InAs Quantum Dots on As-pressure-modulated InAlAs Multilayer Structures on InP(001) Substrate

Self-assembled Semiconductor Quantum Dots Decorating the Facets of GaAs Nanowire for Single-Photon Emission

Modeling InAs Quantum-Dot Formation on the Side Surface of GaAs Nanowires

Fabrication and Optical Properties of Multishell Inas Quantum Dots on Gaas Nanowires

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Zincblende InAsxP1- x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

InAs QDs on (111)-Faceted Si (001) Hollow Substrates with Strong Emission at 1300 Nm and 1550 Nm

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate