Effect of substrate temperature and annealing on InAs quantum dots grown by droplet epitaxy
Xiaoxiao XU,Xiang GUO,Yi WANG,Zijiang LUO,Chen YANG,Xiaoshan YANG,Zhihuan ZHANG,Jian LIU,Zhao DING
DOI: https://doi.org/10.3969/j.issn.1001-9731.2018.03.035
2018-01-01
Abstract:InAs quantum dots (QDs)grown by indium droplet epitaxy at different substrate temperatures,with-out or with annealing are reported in this work.At last,a physical model is build.Indium droplets form quan-tum wires (QWs)along the [1 1-0]direction at first,then divide into short parts to maintain the minimum sur-face energy,and these parts become the nuclei of quantum dots.While substrate temperature increases from 460 to 480 ℃,parts coming from the quantum wires become more as well as QDs,at the same time,the number of QWs decreases,which leads to the increase of nanostructure's average height from 4.09 to 4.58 nm.After the annealing introduced to the experiment under the condition of substrate temperature 480 ℃,QDs are the only nanostructure in the scanning area with its average height increases to 8.5 6 nm.It can be speculated that the growth of InAs quantum dots by indium droplet epitaxy is a progress which form QWs at first,then QWs di-vide into short parts capturing atoms absorbed to the edge of steps because of the influence of the Ehrlich-Schwoebel barriers (ES barriers)to form QDs.Also,the introduction of annealing will promote the QW-to-QDs transformation,and improve the uniformity of QDs'size.At last,a physical model is build according to the analysis above.