Abstract:We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are observed depending on the crystallization temperature: local drilling and long-range etching. In local drilling occurring at temperatures of ≤500 °C, the In droplet locally liquefies the InP underneath and the P atoms can easily diffuse out of the droplet to the edges. During crystallization, the As atoms diffuse into the droplet and crystallize at the solid–liquid interface, forming an InAs etch pit underneath the QD. In long-range etching, occurring at higher temperatures of >500 °C, the InP layer is destabilized and the In atoms from the surroundings migrate toward the droplet. The P atoms can easily escape from the surface into the vacuum, forming trenches around the QD. We show for the first time the formation of trenches and long-range etching in InAs/InP QDs with atomic resolution. Both etching processes can be suppressed by growing a thin layer of InGaAs prior to the droplet deposition. The QD composition is estimated by finite element modeling in combination with X-STM. The change in the morphology of QDs due to etching can strongly influence the fine structure splitting. Therefore, the current atomic-resolution study sheds light on the morphology and etching behavior as a function of crystallization temperature and provides a valuable insight into the formation of InAs/InP droplet epitaxy QDs which have potential applications in quantum information technologies.

Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates

Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing

GaSb Quantum Dot Morphology for Different Growth Temperatures and the Dissolution Effect of the GaAs Capping Layer

Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics.

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression

Control of complex quantum structures in droplet epitaxy

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

Methods to Tune the Electronic States of Self-Organized InAs/GaAs Quantum Dots

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon

Growth Optimization of Self-Organized InSb/InAs Quantum Dots

In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers