Atomic-scale Insights of the Effect of Growth Temperature on the Migration Behavior of Al Atoms in InGaAs/AlGaAs Multiple Quantum Wells

Xiaodong Hao,Lei Li,Qingbo Kong,Shufang Ma,Jiahui Wang,Yang Xu,Xingyu Liu,Bin Han,Bocang Qiu,Bingshe Xu

DOI: https://doi.org/10.1016/j.mssp.2022.107197

IF: 4.1

2023-01-01

Materials Science in Semiconductor Processing

Abstract:The growth temperature is a vital role in determining the overall crystal quality of the InGaAs/AlGaAs multiple quantum wells (MQWs) by regulating the migration of atoms at the interfaces, particularly the group (III) elements. In this study, two samples of InGaAs/AlGaAs MQWs were grown by the metal-organic chemical vapor deposition (MOCVD) method in the growth temperatures of 515°C and 650°C, respectively, and the effect of growth temperature on the interfacial structure of MQWs was investigated using high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL). Moreover, the state-of-the-art aberration-corrected scanning transmission electron microscopy (Cs-STEM) technique is also used to observe the atomic structure at the well-barrier interface, particularly the migration behavior of Al atoms, to deeply discuss the effect of the growth temperature on the interface structure of InGaAs/AlGaAs MQWs, and subsequently the optical performance.