Abstract:Four types of self-assembled InAs/GaAs quantum dots (QDs) were grown by molecular beam epitaxy and studied via temperature-dependent and time-resolved photoluminescence (PL) spectroscopy measurements. A thin InGaAs stain reducing layer (SRL) is adopted which extends the emission wavelength to 1.3 μm and the influence of strain on QDs is investigated. The SRL releases the strain between the wetting layer and QDs, and enlarges the size of QDs, as shown by atomic force microscopy measurements. As the thickness of InAs layer decreases to 1.7 ML, the QDs with the SRL are chained to strings and the density of QDs increases significantly, which leads to an abnormal redshift of 1.3 μm PL peak at room temperature. PL peaks of InAs QDs with the SRL show redshift compared with the QDs directly deposited on GaAs matrix. The dependences of PL lifetime on the QD size, density and temperature (T) are systematically studied. It is observed that the PL lifetime of QDs is insensitive to T below 50 K. Beyond 50 K, increases and then drops at higher temperature, with a peak at TC, which was determined by the SRL and the thickness of InAs. We have also observed an obvious PL spectral redshift of the QDs with 1.7 ML InAs coverage on SRL at low T as the measuring time delays. The PL lifetime of QDs with the SRL is smaller than that of QDs without the SRL. The QDs with different densities have different PL lifetime dependence on the QDs size. These observations can be explained by the competition between the carrier redistribution and thermal emission.

Optical and material characteristics of InAs/GaAs quantum dots

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Photoluminescence and Lasing Properties of InAs/GaAs Quantum Dots Grown by Metal-Organic Chemical Vapour Deposition

Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Covered by InxGa1−xAs (0⩽X⩽0.3)

Optical Properties and Structure of InAs Quantum Dots in Near-Infrared Band

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

Evolution of Inas Quantum Dots During Annealing Process

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Temperature Dependent and Time-Resolved Photoluminescence Studies of Inas Self-Assembled Quantum Dots with Ingaas Strain Reducing Layer Structure

Optical Properties of InAs Quantum Dots Grown on Patterned Si with a Thin GaAs Buffer Layer

Structural and Optical Characteristics of Self-Organized InAs Quantum Dots Grown on GaAs (311)A Substrates

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Morphological and Temperature-Dependent Optical Properties of InAs Quantum Dots on GaAs Nanowires with Different InAs Coverage

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Combined Optical And Electrical Studies Of The Effects Of Annealing On The Intrinsic States And Deep Levels In A Self-Assembled Inas Quantum-Dot Structure