Abstract:The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $\Gamma$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

PL of low-density InAs/GaAs quantum dots with different bimodal populations

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Different Growth Mechanisms of Bimodal InAs/GaAs QDs

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Photoluminescence and Lasing Properties of InAs/GaAs Quantum Dots Grown by Metal-Organic Chemical Vapour Deposition

Photoluminescence Study of Low Density InAs Quantum Clusters Grown by Molecular Beam Epitaxy.

Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography

Photoluminescence Investigation of Inas Bimodal Self-Assembled Quantum Dots State Filling

Photoluminescence Comparation Of Inas Quantum Dots With Different Capping

1.3 Μm InAs/GaAs Quantum Dots with Broad Emission Spectra

Thermal redistribution of photocarriers between bimodal quantum dots

Low-Density Inas Quantum Dots Growth by Molecular Beam Epitaxy

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Optical And Local Current Studies On Inas/Gaas Quantum Dots

Effect of in X Ga 1− X As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates

1.3 Mu M Inas/Gaas Self-Assembled Quantum Dots Grown on In0.2ga0.8as-Gaas Combined Strain-Buffer Layer

Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots