Abstract:Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs.

Photoluminescence Comparation Of Inas Quantum Dots With Different Capping

Explanation of Unusual Photoluminescence Behavior from InAs Quantum Dots with InAlAs Capping

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Emission Dynamics of Inas Self-Assembled Quantum Dots with Different Cap Layer Structures

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

PL of low-density InAs/GaAs quantum dots with different bimodal populations

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing

Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

Photoluminescence and Lasing Properties of InAs/GaAs Quantum Dots Grown by Metal-Organic Chemical Vapour Deposition

Optical and material characteristics of InAs/GaAs quantum dots

Effects of Inalas Strain Reducing Layer on the Photoluminescence Properties of Inas Quantum Dots Embedded in Ingaas/Gaas Quantum Wells