Abstract:The study of the temperature dependence of photoluminescence(PL)in self-assembled quantum dots(QDs)is essentially important for the realization of room temperature efficient photonic devices.The temperature dependence of photoluminescence in self-assembled QDs will be directly determined by the temperature dependence of carrier dynamics process in self-assembled QDs.As the temperature increases,the carriers will thermal escape into the wetting layer(WL)from the ground states of an ensemble of QDs with difference sizes and then some of them will be recaptured by other QDs,i.e.carrier will transfer between the ensemble of QDs with difference sizes when the temperature increases.The temperature dependence of carrier dynamics process in self-assembled QDs was simulated with the steady-state rate equation model of carrier dynamics.The model takes into account the temperature depen-dence of the energy band gap of QDs material.The PL spectra of self-assembled QDs at difference temperatures and the temperature dependence of integrated PL intensity,FWHM and peak position were obtained.The results show that the calculated temperature dependence of integrated PL intensity,FWHM and peak position is consistent with the experimental data reported before.The agreement between experimental data and model simulations suggests the description of the carrier dynamics process in self-assembled QDs by the steady-state rate equation model taking into account the temperature dependence of the energy band gap of self-assembled QDs material is viable.

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots

Investigation of temperature-dependent photoluminescence in multi-quantum wells

Temperature Dependence of Photoluminescence in Self-assembled Bimodal Quantum Dots

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Temperature Dependence of Photoluminescence from Self-Organized Ge Quantum Dots with Large Size and Low Density

Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Photoluminescence Comparation Of Inas Quantum Dots With Different Capping

Photoluminescence Studies Of Modulation-Doped In0.60ga0.40as/In0.52al0.48as Strained Multiple-Quantum Wells

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Photoluminescence Characteristics of GaAs/AlGaAs Quantum Dot Arrays Fabricated by Dry and Dry-Wet Etching

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Long Luminescence Lifetime In Self-Assembled Ingaas/Gaas Quantum Dots At Room Temperature