Abstract:Two types of InAs self-assembled Quantum dots (QDs) were prepared by Molecular beam epitaxy. Atomic force microscopy (AFM) measurements showed that, compared to QDs grown on GaAs substrate, QDs grown on InGaAs layer has a significantly enhanced density. The short spacing (several nanometer) among QDs stimulates strong coupling and leads to a large red-shift of the 1.3 μm photoluminescence (PL) peak. We study systematically the dependence of PL lifetime on the QDs size, density and temperature (T). We found that, below 50 K, the PL lifetime is insensitive to temperature, which is interpreted from the localization effects. As T increases, the PL lifetime increases, which can be explained from the competition between the carrier redistribution and thermal emission at higher temperature. The increase of carriers in QDs migrated from barriers and wetting layer (WL), and the redistribution of carriers among QDs enhance the PL lifetime as T increases. The thermal emission and non-radiative recombination have effects to reduce the PL lifetime at higher T. As a result, the radiative recombination lifetime is determined by the wave function overlapping of electrons and holes in QDs, and QDs with different densities have different PL lifetime dependence on the QDs size.

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Temperature and Power-Density-dependent Inter-Shell Energy States in InAs/GaAs Quantum Dots

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Temperature behavior of excitation emission in self-organized InAs quantum dots

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

Temperature And Excitation Dependence Of Photoluminescence From In/sub0.4/Ga/sub0.6/As Quantum Dots

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Optical and material characteristics of InAs/GaAs quantum dots

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Temperature Dependence of Electron Emission from InAs∕GaAs Quantum Dots

Exciton localization and temperature stability in self‐organized InAs quantum dots

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots

Thermal redistribution of photocarriers between bimodal quantum dots

Photoluminescence studies of wetting layer in InAs/GaAs self-organized quantum dot structures

Temperature dependent empirical pseudopotential theory for self-assembled quantum dots.

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots