Abstract:Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Carrier Emission from the Electronic States of Self-Assembled Indium Arsenide Quantum Dots

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Thermal redistribution of photocarriers between bimodal quantum dots

Temperature-Dependent Carrier Dynamics In Self-Assembled Ingaas Quantum Dots

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.

Exciton localization and temperature stability in self‐organized InAs quantum dots

Temperature behavior of excitation emission in self-organized InAs quantum dots

Temperature Dependence of Carrier Dynamics in an Inhomogeneous Array of Quantum Dots

Carrier Dynamics in Hybrid Nanostructure with Electronic Coupling from an InGaAs Quantum Well to InAs Quantum Dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Inhibited Carrier Transfer in Ensembles of Isolated Quantum Dots

Variation of the Carrier Lifetime Across the Ground-State Band of Ensemble Quantum Dots: an Indication for Quantum-Dot Characteristics at High Temperatures

Effects of Photon and Thermal Coupling Mechanisms on the Characteristics of Self-Assembled Inas/Gaas Quantum Dot Lasers

Carrier capture in InAs monolayer quantum wells grown on GaAs substrates

Relation between photocurrent and DLTS signals observed for quantum dot systems

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)