Abstract:The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far structural and PL properties have been probed from two different epitaxial layers, namely top-capped and buried layers respectively. Here, we report for the first time both structural and PL measurements from an uncapped layer of InGaAs QDs to correlate directly composition, strain and shape of QDs with the optical properties. Synchrotron X-ray scattering measurements show migration of In atom from the apex of QDs giving systematic reduction of height and enlargement of QDs base in the capping process. The optical transitions show systematic reduction in the energy of ground state and the first excited state transition lines with increase in capping but the energy of the second excited state line remain unchanged. We also found that the excitons are confined at the base region of these elliptically shaped QDs showing an interesting volume-dependent confinement energy scaling of 0.3 instead of 0.67 expected for spherical dots. The presented method will help us tuning the growth of QDs to achieve desired optical properties.

Explanation of Unusual Photoluminescence Behavior from InAs Quantum Dots with InAlAs Capping

Photoluminescence Comparation Of Inas Quantum Dots With Different Capping

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules

Effectiveness of AlGaAs barrier layers as a redistribution channel of photoexcited carriers on anomalous temperature dependence of photoluminescence properties of GaAs quantum dots

Effects Of Gaas On Photoluminescence Properties Of Self-Assembled Inas Quantum Dots

Optical Property of Vertically Stacked, Selfassembled Inas Quantum Dots in Al0.5ga0.5as Barriers

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

Time-resolved Photoluminescence of Sub-Monolayer InGaAs/GaAs Quantum-Dot-quantum-well Heterostructures

Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping