Abstract:The study of the temperature dependence of photoluminescence(PL)in self-assembled quantum dots(QDs)is essentially important for the realization of room temperature efficient photonic devices.The temperature dependence of photoluminescence in self-assembled QDs will be directly determined by the temperature dependence of carrier dynamics process in self-assembled QDs.As the temperature increases,the carriers will thermal escape into the wetting layer(WL)from the ground states of an ensemble of QDs with difference sizes and then some of them will be recaptured by other QDs,i.e.carrier will transfer between the ensemble of QDs with difference sizes when the temperature increases.The temperature dependence of carrier dynamics process in self-assembled QDs was simulated with the steady-state rate equation model of carrier dynamics.The model takes into account the temperature depen-dence of the energy band gap of QDs material.The PL spectra of self-assembled QDs at difference temperatures and the temperature dependence of integrated PL intensity,FWHM and peak position were obtained.The results show that the calculated temperature dependence of integrated PL intensity,FWHM and peak position is consistent with the experimental data reported before.The agreement between experimental data and model simulations suggests the description of the carrier dynamics process in self-assembled QDs by the steady-state rate equation model taking into account the temperature dependence of the energy band gap of self-assembled QDs material is viable.

Thermal redistribution of photocarriers between bimodal quantum dots

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Temperature Dependence of Photoluminescence in Self-assembled Bimodal Quantum Dots

Temperature behavior of excitation emission in self-organized InAs quantum dots

Experimental research on carrier redistribution in InAs/GaAs quantum dots

Anomalous Temperature Dependence of Photoluminescence from InAs Quantum Dots

Temperature and Excitation Power Dependence of the Optical Properties of InAs Self-Assembled Quantum Dots Grown Between Two Al0.5Ga0.5As Confining Layers

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

PL of low-density InAs/GaAs quantum dots with different bimodal populations

Time-resolved Photoluminescence Spectra of Self-Assembled InAs/GaAs Quantum Dots

Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature

Inhibited Carrier Transfer in Ensembles of Isolated Quantum Dots

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Different Growth Mechanisms of Bimodal InAs/GaAs QDs

Effect of Thermal Carrier Transfer on Photofluorescence in Self-assembled Quantum Dots

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Temperature and Power-Density-dependent Inter-Shell Energy States in InAs/GaAs Quantum Dots

Optical and material characteristics of InAs/GaAs quantum dots

Carrier Relaxation and Thermal Activation of Localized Excitons in Self-Organized InAs Multilayers Grown on GaAs Substrates.

Photoluminescence Investigation of Inas Bimodal Self-Assembled Quantum Dots State Filling

PHOTOLUMINESCENCE STUDY OF MULTILAYER in In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As QUANTUM DOT AT VARIOUS TEMPERATURE