Abstract:In recent years, despite significant progress in the synthesis, characterization, and integration of various nanowire (NW) material systems, crystal orientation controlled NW growth as well as real-time assessment of their growth-structure-property relationships still presents one of the major challenges in deploying NWs for practical large-scale applications. In this study, we propose, design, and develop a multilayer NW printing scheme for the determination of crystal orientation controlled photovoltaic properties of parallel GaAs NW arrays. By tuning the catalyst thickness and nucleation and growth temperatures in the two-step chemical vapor deposition, crystalline GaAs NWs with uniform, pure ⟨110⟩ and ⟨111⟩ orientations and other mixture ratios can be successfully prepared. Employing lift-off resists, three-layer NW parallel arrays can be easily attained for X-ray diffraction in order to evaluate their growth orientation along with the fabrication of NW parallel array based Schottky photovoltaic devices for the subsequent performance assessment. Notably, the open-circuit voltage of purely ⟨111⟩-oriented NW arrayed cells is far higher than that of ⟨110⟩-oriented NW arrayed counterparts, which can be interpreted by the different surface Fermi level pinning that exists on various NW crystal surface planes due to the different As dangling bond densities. All this indicates the profound effect of NW crystal orientation on physical and chemical properties of GaAs NWs, suggesting the careful NW design considerations for achieving optimal photovoltaic performances. The approach presented here could also serve as a versatile and powerful platform for in situ characterization of other NW materials.

Crystallography of Phase Transformation in the Self-Inclined Inas Nanowires Grown on Gaas{111}

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Crystal Phase And Growth Orientation Dependence Of Gaas Nanowires On Nixgay Seeds Via Vapor-Solid-Solid Mechanism

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Growth of Nano-Structures on Composition-Modulated Inalas Surfaces

Phase Selection in Self-catalyzed GaAs Nanowires

Epitaxial nanowires Evolution of Epitaxial InAs Nanowires on GaAs ( 111 ) B * *

Ga Crystallization Dynamics During Annealing of Self-Assisted GaAs Nanowires

Crystal Phase Control in Self-Catalyzed GaAs Nanowires Grown on Pre-Etched Si Substrates

Crystallographically Driven Au Catalyst Movement During Growth of Inas/Gaas Axial Nanowire Heterostructures

Interface dynamics and crystal phase switching in GaAs nanowires

Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion.

In-Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires at Atomic Scale.

Graphitic Platform for Self-Catalysed InAs Nanowires Growth by Molecular Beam Epitaxy

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires.

Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays.

Planar-defect Characteristics and Cross-Sections of 〈001〉, 〈111〉, and 〈112〉 InAs Nanowires

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Growth of InAs NWs with controlled morphology by CVD