Abstract:Abstract We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO 2 -masks on Si (111) with various mask opening sizes (20–150 nm) and pitches (0.25–2 μ m), high NW yield of >90% (irrespective of the InAsSb alloy composition) is realized by the creation of an As-terminated 1 × 1-Si(111) surface prior to NW nucleation. While the NW aspect ratio decreases continually with increasing Sb content ( x Sb from 0% to 30%), we find a remarkable dependence of the aspect ratio on the mask opening size yielding up to ∼8-fold increase for openings decreasing from 150 to 20 nm. The effects of the interwire separation (pitch) on the NW aspect ratio are strongest for pure InAs NWs and gradually vanish for increasing Sb content, suggesting that growth of InAsSb NW arrays is governed by an In surface diffusion limited regime even for the smallest investigated pitches. Compositional analysis using high-resolution x-ray diffraction reveals a substantial impact of the pitch on the alloy composition in homogeneous InAsSb NW arrays, leading to much larger x Sb as the pitch increases due to decreasing competition for Sb adatoms. Scanning transmission electron microscopy and associated energy-dispersive x-ray spectroscopy performed on the cross-sections of individual NWs reveal an interesting growth-axis dependent core–shell like structure with a discontinuous few-nm thick Sb-deficient coaxial boundary layer and six Sb-deficient corner bands. Further analysis evidences the presence of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces that is found responsible for the formation of the characteristic core–shell structure.

Evolution of Epitaxial InAs Nanowires on GaAs 111B.

Epitaxial nanowires Evolution of Epitaxial InAs Nanowires on GaAs ( 111 ) B * *

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Catalyst-free Growth of Lateral InAs Nanowires

Axiotaxy Driven Growth of Belt-Shaped InAs Nanowires in Molecular Beam Epitaxy

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

High-quality Epitaxial Wurtzite Structured InAs Nanosheets Grown in MBE.

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

Growth of GaAs nanowires on Au, Au / Pd, Ag, Ni, Ga, Cu, Al, Ti metal films

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Nonpolar GaAs Nanowires Catalyzed by Cu 5 As 2 : Insights into As Layer Epitaxy

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy