Abstract:The solid-source molecular beam epitaxy (SSMBE) technology using valved cracker cells is one of the most promising techniques for epitaxial growth of high-quality phosphorus-containing compound semiconductors. This novel technology is transplanted successfully onto a homemade MBE system and is studied roundly. The growth of 1.55-mum-wavelength-range strained and strain-compensated InAsP multiple quantum well (MQW) structures are investigated. A low growth temperature or large V/III flux ratio is found to be favorable for attaining a high structural quality of highly strained MQW structures, and the growth temperature has a critical effect on the sample's optical property. It is also found that an intermediate InP layer of several monolayers, which is inserted between the well and the barrier, is necessary to improve the quality of strain-compensated MQW structures. The measured photoluminescence (PL) full-width at half-maximum (FWHM) of 18.7 meV and 17.2 meV for stained and strain-compensated MQW at room temperature are amon the best reported to date for 1.55-mum-wavelength MQW laser structures. Finally, broad-area (BA) separate confinement heterostructure (SCH) MQW lasers are fabricated, and the threshold current density is measured to be 1.4 kA/cm(2). This is the first report, to the-best of the authors' knowledge, on a 1.55-mum-wavelength-range strained InAsP/InGaAsP MQW laser structure grown by SSMBE.

Solid Source Molecular Beam Epitaxy Growth of InAsP Using As2 and As4 Modes

InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4

Solid-Source Molecular Beam Epitaxial Growth of InP and InGaAsP

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Inp and Ingaasp Materials Grown by Solid-Source Molecular Beam Epitaxy

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

quantum well structures grown by molecular beam epitaxy

Studies on Incorporation of As2 and As4 in III–V Compound Semiconductors with Two Group V Elements Grown by Molecular Beam Epitaxy

Competitive Emissions of InAs (qds)/gainasp/inp Grown by GSMBE

All-Solid-Source Molecular Beam Epitaxy: Technology and Applications

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Liquid Phase Epitaxy Growth and Photoluminescence of InAs1−x−ySbxPy Epilayer

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers

1.55 Μm Wavelength InAsP/InGaAsP Multiple Quantum Well Laser Based Upon Solid Source Molecular Beam Epitaxy

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates

Growth of A Periodic Inp-Based Heteroepitaxial Structure for A Quantum Cascade Laser